Tunnel Junction AlGaInP Light Emitting Diode
Data(s) |
2002
|
---|---|
Resumo |
The n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes (TJ-LED), then n-type GaP layer is used as current spreading layer. Because resistivity of the n-type GaP is lower than that of p-type, the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer. For TJ-LED with 3μm n-type GaP current spreading layer, experimental results show that compared with conventional LED with p-type GaP current spreading layer, light output power is increased for 50% at 20mA and for 66.7% at 100mA. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang Guohong;Shen Guangdi;Guo Xia;Gao Guo;Wei Xin;Zhang Guangze;Ma Xiaoyu;Li Yuzhang;Chen Lianghui.Tunnel Junction AlGaInP Light Emitting Diode,半导体学报,2002,23(6):628-631 |
Palavras-Chave | #光电子学 |
Tipo |
期刊论文 |