Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD

The characteristics of thickness enhancement factor and bandgap wavelength of selectively grown In-GaAsP are investigated. A high thickness enhancement factor of 2.9 is obtained. Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG. The threshold current is as low as 10.8mA. The output power is 10m W at 60mA without coating and the SMSR is 35.8dB. The vertical far field angle (FWHM) is decreased from 34 °to 9 °. The tolerance of 1dBm misalignment is 3.4μm vertically.

The characteristics of thickness enhancement factor and bandgap wavelength of selectively grown In-GaAsP are investigated. A high thickness enhancement factor of 2.9 is obtained. Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG. The threshold current is as low as 10.8mA. The output power is 10m W at 60mA without coating and the SMSR is 35.8dB. The vertical far field angle (FWHM) is decreased from 34 °to 9 °. The tolerance of 1dBm misalignment is 3.4μm vertically.

于2010-11-23批量导入

zhangdi于2010-11-23 13:08:31导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:08:31Z (GMT). No. of bitstreams: 1 5112.pdf: 267014 bytes, checksum: b795e7ec67a7e3673f842b5a32ed0fe3 (MD5) Previous issue date: 2002

National Research Center for Optoelectronic Technology，Institute of Semiconductors, The Chinese Academy of Sciences