Quantitative Strain and Compositional Studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the InxGa1 (-) As-x channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the InxGa1 (-) As-x layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the InxGa1 (-) As-x channel layer was pseudomorphically grown leading to tetragonal strain along the 001] growth direction and that the average indium content (x) in the epilayer is similar to 0.12. We found consistency in the results obtained using various methods of analysis.

RTD与PHEMT的集成研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

RTD与PHEMT集成的几个关键工艺

在新型的共振隧穿二极管(RTD)器件与PHEMT器件单片集成材料结构上,研究和分析了分立器件的制作工艺,给出了分立器件的制作工艺参数.利用上述工艺成功制作了RTD和PHEMT器件,并在室温下分别测试了RTD器件和PHEMT器件的电学特性.测试表明:在室温下,RTD器件的峰电流密度与谷电流密度之比提高到1.78;PHEMT器件的最大跨导约为120mS/mm,在Vgs＝0.5V时的饱和电流约为270mA/mm.这将为RTD集成电路的研制奠定工艺基础.

MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料

用MBE方法制备的PHEMT微结构材料，其2DEG浓度随材料结构的不同在2.0-4.0×10~(12)cm~(-2)之间，室温霍耳迁移率在5000-6500cm~2·V~(-1)·s~(-1)之间。制备的PHEMT器件，栅长为0.7μm的器件的直流特性：I_(dss)～280mA/mm,I_(max)～520-580mA/mm,g_m～320-400mS/mm,BV_(DS)>15V(I_(DS)=1mA/mm),BV_(GS)>10V,微波特性：P_0～600-900mW/mm,G～6-10dB,η_(add)～40-60%;栅长为0.4μm的器件的直流特性:I_(max)～800mA/mm,g_m>400mS/mm。

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

Analysis and Synthesis of pHEMT Class-E Amplifiers with Shunt Inductor including ON-State Active-Device Resistance Effects

In this theoretical paper, the analysis of the effect that ON-state active-device resistance has on the performance of a Class-E tuned power amplifier using a shunt inductor topology is presented. The work is focused on the relatively unexplored area of design facilitation of Class-E tuned amplifiers where intrinsically low-output-capacitance monolithic microwave integrated circuit switching devices such as pseudomorphic high electron mobility transistors are used. In the paper, the switching voltage and current waveforms in the presence of ON-resistance are analyzed in order to provide insight into circuit properties such as RF output power, drain efficiency, and power-output capability. For a given amplifier specification, a design procedure is illustrated whereby it is possible to compute optimal circuit component values which account for prescribed switch resistance loss. Furthermore, insight into how ON-resistance affects transistor selection in terms of peak switch voltage and current requirements is described. Finally, a design example is given in order to validate the theoretical analysis against numerical simulation.

Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high. From the point view of device processing, the gate recess depth must be carefully controlled. In the present work, AlGaAs/InGaAs/GaAs pHEMTs structures were grown by molecular beam epitaxy. Layer structures of the pHEMTs were optimized to get high transfer efficiency of the electrons. Gate recess depth was also optimized. A 0.2 mum pHEMT was fabricated on the materials with optimized layer structure using the optimized gate recess depth. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 published by Elsevier Science Ltd.

Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matched or pseudomorphic channels have been grown by molecular-beam epitaxy (MBE). The purpose of this work is to enhance the channel conductivity by changing the epitaxial structure and growth process. With the use of pseudomorphic step quantum-well channel, the highest channel conductivity is achieved at x = 0.7, the corresponding electron mobilities are as high as 12300 (300 K) and 61000 cm(2)/V.s (77 K) with two-dimensional electron gas (2DEG) density of 3.3 x 10(12) cm(-2). These structures are comprehensively characterized by Hall measurements, photoluminescence, double crystal X-ray diffraction and transmission electron microscopy. Strong room-temperature luminescence is observed, demonstrating the high optical quality of the samples. We also show that decreasing the In composition in the InyAl1-yAs spacer is very effective to increase the 2DEG density of PHEMT structures. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

HEMT结构材料中二维电子气的输运性质研究

该文通过变温的Hall测量系统地研究了GaAs基HEMT和PHEMT以及InP基HEMT三种结构材料的电子迁移率μ_n和二维电子浓度n_s。仔细地分析了不同HEMT结构材料的散射机制对电子迁移率的影响以及不同HEMT材料结构对电子浓度的影响。研究结果表明InP基HEMT的n_s×μ_n值比GaAs基HEMT和PHEMT的n_s×μm值都大，说明可以用n_s×μ_0值来判断HEMT结构材料的性能好坏。

Projecto de receptores integrados de banda larga

O presente trabalho tem como objectivo o estudo e projecto de receptores optimizados para sistemas de comunicações por fibra óptica de muito alto débito (10Gb/s e 40Gb/s), com a capacidade integrada de compensação adaptativa pós-detecção da distorção originada pela característica de dispersão cromática e de polarização do canal óptico. O capítulo 1 detalha o âmbito de aplicabilidade destes receptores em sistemas de comunicações ópticas com multiplexagem no comprimento de onda (WDM) actuais. O capítulo apresenta ainda os objectivos e principais contribuições desta tese. O capítulo 2 detalha o projecto de um amplificador pós-detecção adequado para sistemas de comunicação ópticos com taxa de transmissão de 10Gb/s. São discutidas as topologias mais adequadas para amplificadores pós detecção e apresentados os critérios que ditaram a escolha da topologia de transimpedância bem como as condições que permitem optimizar o seu desempenho em termos de largura de banda, ganho e ruído. Para além disso são abordados aspectos relacionados com a implementação física em tecnologia monolítica de microondas (MMIC), focando em particular o impacto destes no desempenho do circuito, como é o caso do efeito dos componentes extrínsecos ao circuito monolítico, em particular as ligações por fio condutor do monólito ao circuito externo. Este amplificador foi projectado e produzido em tecnologia pHEMT de Arsenieto de Gálio e implementado em tecnologia MMIC. O protótipo produzido foi caracterizado na fábrica, ainda na bolacha em que foi produzido (on-wafer) tendo sido obtidos dados de caracterização de 80 circuitos protótipo. Estes foram comparados com resultados de simulação e com desempenho do protótipo montado num veículo de teste. O capítulo 3 apresenta o projecto de dois compensadores eléctricos ajustáveis com a capacidade de mitigar os efeitos da dispersão cromática e da dispersão de polarização em sistemas ópticos com débito binário de 10Gb/s e 40Gb/s, com modulação em banda lateral dupla e banda lateral única. Duas topologias possíveis para este tipo de compensadores (a topologia Feed-Forward Equalizer e a topologia Decision Feedback Equaliser) são apresentadas e comparadas. A topologia Feed-Forward Equaliser que serviu de base para a implementação dos compensadores apresentados é analisada com mais detalhe sendo propostas alterações que permitem a sua implementação prática. O capítulo apresenta em detalhe a forma como estes compensadores foram implementados como circuitos distribuídos em tecnologia MMIC sendo propostas duas formas de implementar as células de ganho variável: com recurso à configuração cascode ou com recurso à configuração célula de Gilbert. São ainda apresentados resultados de simulação e experimentais (dos protótipos produzidos) que permitem tirar algumas conclusões sobre o desempenho das células de ganho com as duas configurações distintas. Por fim, o capítulo inclui ainda resultados de desempenho dos compensadores testados como compensadores de um sinal eléctrico afectado de distorção. No capítulo 4 é feita uma análise do impacto da modulação em banda lateral dupla (BLD) em comparação com a modulação em banda lateral única (BLU) num sistema óptico afectado de dispersão cromática e de polarização. Mostra-se que com modulação em BLU, como não há batimento entre portadoras das duas bandas laterais em consequência do processo quadrático de detecção e há preservação da informação da distorção cromática do canal (na fase do sinal), o uso deste tipo de modulação em sistemas de comunicação óptica permite maior tolerância à dispersão cromática e os compensadores eléctricos são muito mais eficientes. O capítulo apresenta ainda resultados de teste dos compensadores desenvolvidos em cenários experimentais de laboratório representativos de sistemas ópticos a 10Gb/s e 40Gb/s. Os resultados permitem comparar o desempenho destes cenários sem e com compensação eléctrica optimizada, para os casos de modulação em BLU e em BLD, e considerando ainda os efeitos da dispersão na velocidade de grupo e do atraso de grupo diferencial. Mostra-se que a modulação BLU em conjunto com compensação adaptativa eléctrica permite um desempenho muito superior á modulação em BLD largamente utilizada nos sistemas de comunicações actuais. Por fim o capítulo 5 sintetiza e apresenta as principais conclusões deste trabalho.

Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.