Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
27/05/2014
27/05/2014
01/12/1999
|
| Resumo |
The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz. |
| Formato |
267-270 |
| Identificador |
http://dx.doi.org/10.1109/IMOC.1999.867106 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270. http://hdl.handle.net/11449/65955 10.1109/IMOC.1999.867106 2-s2.0-0033295721 |
| Idioma(s) |
eng |
| Relação |
SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings |
| Direitos |
closedAccess |
| Palavras-Chave | #Front end receivers #Gilbert cell mixers #Low noise amplifiers #Pseudomorphic high electron mobility transistors #Amplifiers (electronic) #Buffer circuits #Computer simulation #Electric network topology #High electron mobility transistors #Mixer circuits #Monolithic microwave integrated circuits #Semiconducting gallium arsenide #Signal receivers #Integrated circuit layout |
| Tipo |
info:eu-repo/semantics/conferencePaper |
