The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
Data(s) |
2001
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Resumo |
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high. From the point view of device processing, the gate recess depth must be carefully controlled. In the present work, AlGaAs/InGaAs/GaAs pHEMTs structures were grown by molecular beam epitaxy. Layer structures of the pHEMTs were optimized to get high transfer efficiency of the electrons. Gate recess depth was also optimized. A 0.2 mum pHEMT was fabricated on the materials with optimized layer structure using the optimized gate recess depth. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 published by Elsevier Science Ltd. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Cao X; Zeng YP; Kong MY; Pan L; Wang BQ; Zhu ZP .The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices ,SOLID-STATE ELECTRONICS,2001 ,45(5):751-754 |
Palavras-Chave | #半导体物理 #molecular beam epitaxy #pseudomorphic HEMTs #photoluminescence |
Tipo |
期刊论文 |