PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION AND OXIDATION OF THE INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of a potassium overlayer on nitridation and oxidation of the InP(100) surface is investigated by core-level and valence-band photoemission spectroscopy using synchrotron radiation. In comparison with the K-promoted nitridation of the InP(110) surface obtained by cleavage in situ, we found that the promotive effect for the InP(100) surface cleaned by ions bombardment is much stronger and that the nitridation products consist of two kinds of complexes: InPNx and InPNx+y. The results confirmed that surface defects play an important part in the promotive effect. Furthermore, in contrast with K-promoted oxidation of InP(100) where bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100). (C) 1995 American Vacuum Society.

PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION OF INP(100) SURFACE USING SYNCHROTRON-RADIATION

The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlayers is investigated by core-level and valence-band photoemission spectroscopy using Synchrotron radiation. In comparison with InP(110) surface, we found the promotion is much stronger for InP(100) surface due to the central role of surface defects in the promotion; furthermore, in contrast with K-promoted oxidation of InP(100) where the bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100).

光电子材料InP与金属接触的物理特性研究

讨论了InP与金属接触时的电荷输运方式;给出了n型InP材料掺杂浓度为(1×10~(15) ～1×10~(17)) cm~(-3)时电子输运(以热电子发射为主)的数学表达式; 测量了国产InP单晶与一些金属的接触势垒;分析了“金属—n~+-InP”结构,得到了n~+区厚度和势垒高度间的关系。理论结果与实验符合,表明采用该结构,可得到一个势垒极低的金属与InP电极的欧姆接触。

STUDY OF TI/LNP INTERFACE BY PES

The interface of Ti/InP(110) was studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). It is evident that deposition of Ti on the surface of InP(110) at room temperature introduced a break of the In-P bond and a diffusion of In atoms into the Ti film. The interaction of Ti and P occurred at a temperature of 350-degrees-C.

在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

从理论上计算了厚度为110nm的W_(0.95)Ni_(0.05)金属薄膜应变条在InGaAsP/InP双异质结构中形成的应力场分布，及由应力场分布引起的折射率变化。在W_(0.95)Ni_(0.05)金属薄膜应变条半导体中0.2-2μm深度范围内，由应变引起条形波导轴中央的介电常数ε相应增加2.3×10~(-1)-2.2×10~(-2)(2μm应变条宽)和1.2×10~(-1)-4.1×10~(-2)(4μm应变条宽)。同时，测量了由W_(0.95)Ni_(0.05)金属薄膜应变条所形成的InGaAs/InP双异质结光弹效应波导结构导波的近场光模分布。从理论计算和实验结果两方面证实了InGaAsP/InP双异质结光弹效应波导结构对侧向光具有良好的限制作用。

Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

The authors report the self-organized growth of InAs/InAlAs quantum wires on nominal (001) InP substrate and (001) InP substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. The influence of substrate misorientation on the structural and optical properties of these InAs/InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared with that grown on nominal (001) InP substrate, the density of InAs/InAlAs quantum wires grown on misoriented InP(001) substrates is enhanced. A strong lateral composition modulation effect take place in the InAlAs buffer layers grown on misoriented InP substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period InAs quantum wires and greatly improve the size distribution of InAs quantum wires. InAs/InAlAs quantum wires grown on InP (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 American Institute of Physics.

Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors

Defects and morphologies are presented in this paper as revealed with transmission electron microscope (TEM) in the In(0.8)G(0.2)As/InAlAs heterostructure on InP(001) for high-electron-mobility transistors application. Most of the misfit dislocation lines are 60 degrees type and they deviate < 110 > at some angles to either side according to their Burges vectors. The misfit dislocation lines deviating [-110] are divided into two types according to whether their edge component b(eg) of Burges vectors in [001] pointing up or down. If b(eg) points up in the growth direction, there is the local periodical strain modulation along the dislocation line. In addition, the periodical modulation in height along [-110] on the In(0.8)G(0.2)As surface is observed, this surface morphology is not associated with the relaxation of mismatch strain.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As, In0.53Ga0.47As, and (In0.52Al0.48As)(n)/(In0.53Ga0.47As)(m)-short-period-lattice matrices on InP(001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x 4 direction in the 2 x 4 reconstructed (001) surface as revealed with reflection high-energy electron diffraction (RHEED). Alignment of quantum wires in different layers in the InAs/spacer multilayer structures depends on the composition of spacer layers. (C) 2000 Elsevier Science B.V. All rights reserved.

New insight into the origin of twin and grain boundary in InP

X-ray reflectivity curves show bi-crystal (twin) characteristics. Defect segregations at the twin boundary can be seen, whereas stress is relaxed at the edge of the boundary. Relaxation of the stress resulted in the formation of twins and other defects. As a result of the formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. Stress, chemical stoichiometry deviation and non-homogeneous distribution of impurities are the key factors that cause twins in LEC InP crystal growth. (C) 1999 Elsevier Science Ltd. All rights reserved.

Abnormal alignment of misfit dislocations in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure that misfit dislocation lines deviate from the [110] directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.

Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As system grown on the (001) InP substrate that misfit dislocation lines deviate [110] directions at an angle with its value depending on the gallium content. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on misfit dislocations in the interface between the III-V ternary compounds. (C) 1998 American Institute of Physics.

Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

Er离子在Inp、GaAs和Si中的1.54μm特征发光峰

分别在InP、GaAs和Si中以7×10＜′14＞和1×10＜′15＞cm＜′－2＞的剂量进行Er离子注入, 并采用闭管、快速和炉退火等热处理。低温光致发光（PL）、反射式高等电子衍射和卢瑟福背散射实验研究表明, 上述样品中Er＜′3＋＞离子特征发光的中心波长均出现在1．5μm处, 其中InP的发光峰最强, 而注入损伤的恢复是影响Er＜′3＋＞发光的重要因素之一。卢瑟福背散射分析进一步证实退火后Er原子在Si中向表面迁移, 而在InP中的外扩散较小, 并比较了Er在InP和Si晶格中的占位情况。图7参12

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.

Effects of whole-body cryotherapy (-110 degrees C) on proprioception and indices of muscle damage

The purpose of this study was to investigate the effects of whole-body cryotherapy (WBC) on proprioceptive function, muscle force recovery following eccentric muscle contractions and tympanic temperature (TTY). Thirty-six subjects were randomly assigned to a group receiving two 3-min treatments of −110 ± 3 °C or 15 ± 3 °C. Knee joint position sense (JPS), maximal voluntary isometric contraction (MVIC) of the knee extensors, force proprioception and TTY were recorded before, immediately after the exposure and again 15 min later. A convenience sample of 18 subjects also underwent an eccentric exercise protocol on their contralateral left leg 24 h before exposure. MVIC (left knee), peak power output (PPO) during a repeated sprint on a cycle ergometer and muscles soreness were measured pre-, 24, 48 and 72 h post-treatment. WBC reduced TTY, by 0.3 °C, when compared with the control group (P<0.001). However, JPS, MVIC or force proprioception was not affected. Similarly, WBC did not effect MVIC, PPO or muscle soreness following eccentric exercise. WBC, administered 24 h after eccentric exercise, is ineffective in alleviating muscle soreness or enhancing muscle force recovery. The results of this study also indicate no increased risk of proprioceptive-related injury following WBC.