Abnormal alignment of misfit dislocations in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure
| Data(s) |
1998
|
|---|---|
| Resumo |
It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure that misfit dislocation lines deviate from the [110] directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wu J; Li HX; Wang ZG .Abnormal alignment of misfit dislocations in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure ,CHINESE PHYSICS LETTERS,1998,15(1):50-51 |
| Palavras-Chave | #半导体物理 |
| Tipo |
期刊论文 |
