New insight into the origin of twin and grain boundary in InP


Autoria(s): Han Y; Lin L
Data(s)

1999

Resumo

X-ray reflectivity curves show bi-crystal (twin) characteristics. Defect segregations at the twin boundary can be seen, whereas stress is relaxed at the edge of the boundary. Relaxation of the stress resulted in the formation of twins and other defects. As a result of the formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. Stress, chemical stoichiometry deviation and non-homogeneous distribution of impurities are the key factors that cause twins in LEC InP crystal growth. (C) 1999 Elsevier Science Ltd. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12950

http://www.irgrid.ac.cn/handle/1471x/65445

Idioma(s)

英语

Fonte

Han Y; Lin L .New insight into the origin of twin and grain boundary in InP ,SOLID STATE COMMUNICATIONS,1999,110(7):403-406

Palavras-Chave #半导体物理 #semiconductors #synchrotron radiation #LEC GROWTH #CZOCHRALSKI #SINGLE-CRYSTALS
Tipo

期刊论文