Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.

InAs/GaAs single-electron quantum dot qubit

The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics.

High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.

Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors

The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.

An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process

This paper proposes an embedded ultra low power nonvolatile memory in a standard CMOS logic process. The memory adopts a bit cell based on the differential floating gate PMOS structure and a novel operating scheme. It can greatly improve the endurance and retention characteristic and make the area/bit smaller. A new high efficiency all-PMOS charge pump is designed to reduce the power consumption and to increase the power efficiency. It eliminates the body effect and can generate higher output voltage than conventional structures for a same stage number. A 32-bit prototype chip is fabricated in a 0.18 mu m 1P4M standard CMOS logic process and the core area is 0.06 mm(2). The measured results indicate that the typical write/erase time is 10ms. With a 700 kHz clock frequency, power consumption of the whole memory is 2.3 mu A for program and 1.2 mu A for read at a 1.6V power supply.

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.

A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.

Quantum computation using artificial molecules

Two kinds of quantum computation systems using artificial molecules: quantum computer and quantum analog computer are described. The artificial molecule consists of two or three coupled quantum dots stacked along z direction and one single electron, In quantum computer, one-qubit and two-qubit gates are constructed by one molecule and two molecules, respectively. The coupling between two qubits in a quantum gate can be controlled by thin film electrodes. We also constructed a quantum analog computer by designing a three-dot molecule network and mapping a graph 3-colorability problem onto the network. The ground-state configuration of the single electrons in the network corresponds to one of the problem solutions, We numerically study the operations of the two kinds of the quantum computers and demonstrate that they quantum gates can perform the quantum computation and solve complex problems.

A New Lower Bound Technique for Quantum Circuits without Ancillae

We present a technique to derive depth lower bounds for quantum circuits. The technique is based on the observation that in circuits without ancillae, only a few input states can set all the control qubits of a Toffoli gate to 1. This can be used to selectively remove large Toffoli gates from a quantum circuit while keeping the cumulative error low. We use the technique to give another proof that parity cannot be computed by constant depth quantum circuits without ancillæ.

On Finding Sensitivity of Quantum and Classical Gates

We consider a fault model of Boolean gates, both classical and quantum, where some of the inputs may not be connected to the actual gate hardware. This model is somewhat similar to the stuck-at model which is a very popular model in testing Boolean circuits. We consider the problem of detecting such faults; the detection algorithm can query the faulty gate and its complexity is the number of such queries. This problem is related to determining the sensitivity of Boolean functions. We show how quantum parallelism can be used to detect such faults. Specifically, we show that a quantum algorithm can detect such faults more efficiently than a classical algorithm for a Parity gate and an AND gate. We give explicit constructions of quantum detector algorithms and show lower bounds for classical algorithms. We show that the model for detecting such faults is similar to algebraic decision trees and extend some known results from quantum query complexity to prove some of our results.

On the Complexity of Quantum ACC

For any q > 1, let MOD_q be a quantum gate that determines if the number of 1's in the input is divisible by q. We show that for any q,t > 1, MOD_q is equivalent to MOD_t (up to constant depth). Based on the case q=2, Moore has shown that quantum analogs of AC^(0), ACC[q], and ACC, denoted QAC^(0)_wf, QACC[2], QACC respectively, define the same class of operators, leaving q > 2 as an open question. Our result resolves this question, implying that QAC^(0)_wf = QACC[q] = QACC for all q. We also prove the first upper bounds for QACC in terms of related language classes. We define classes of languages EQACC, NQACC (both for arbitrary complex amplitudes) and BQACC (for rational number amplitudes) and show that they are all contained in TC^(0). To do this, we show that a TC^(0) circuit can keep track of the amplitudes of the state resulting from the application of a QACC operator using a constant width polynomial size tensor sum. In order to accomplish this, we also show that TC^(0) can perform iterated addition and multiplication in certain field extensions.

Performance assessment of nanoscale double- and triple- gate FinFETs

This is the first paper to describe performance assessment of triple and double gate FinFETs for High Performance (HP), Low Operating Power (LOP) and Low Standby Power (LSTP) logic technologies is investigated. The impact of gate work-function, spacer width, lateral source/drain doping gradient, fin aspect ratio, fin thickness on device performance, has been analysed in detail and guidelines are presented to meet ITRS specification at 65 and 45 nm nodes. Optimal design of lateral source/drain doping profile can not only effectively control short channel effects, yielding low off-current, but also achieve low values of intrinsic gate delay.

Efficient quantum computation using coherent states

We study universal quantum computation using optical coherent states. A teleportation scheme for a coherent-state qubit is developed and applied to gate operations. This scheme is shown to be robust to detection inefficiency.

Vibrational coherent quantum computation

A long-lived coherent state and nonlinear interaction have been experimentally demonstrated for the vibrational mode of a trapped ion. We propose an implementation of quantum computation using coherent states of the vibrational modes of trapped ions. Differently from earlier experiments, we consider a far-off resonance for the interaction between external fields and the ion in a bidimensional trap. By appropriate choices of the detunings between the external fields, the adiabatic elimination of the ionic excited level from the Hamiltonian of the system allows for beam splitting between orthogonal vibrational modes, production of coherent states, and nonlinear interactions of various kinds. In particular, this model enables the generation of the four coherent Bell states. Furthermore, all the necessary operations for quantum computation, such as preparation of qubits and one-qubit and controlled two-qubit operations, are possible. The detection of the state of a vibrational mode in a Bell state is made possible by the combination of resonant and off-resonant interactions between the ion and some external fields. We show that our read-out scheme provides highly efficient discrimination between all the four Bell states. We extend this to a quantum register composed of many individually trapped ions. In this case, operations on two remote qubits are possible through a cavity mode. We emphasize that our remote-qubit operation scheme does not require a high-quality factor resonator: the cavity field acts as a catalyst for the gate operation.