Dephasing rate in an InAs/GaAs single-electron quantum dot qubit


Autoria(s): Pan LX; Li SS; Liu JL; Niu ZC; Feng SL; Zheng HZ
Data(s)

2002

Resumo

We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.

Identificador

http://ir.semi.ac.cn/handle/172111/11796

http://www.irgrid.ac.cn/handle/1471x/64868

Idioma(s)

英语

Fonte

Pan LX; Li SS; Liu JL; Niu ZC; Feng SL; Zheng HZ .Dephasing rate in an InAs/GaAs single-electron quantum dot qubit ,SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2002,45 (5):666-670

Palavras-Chave #半导体物理 #quantum dot #quantum computing #decoherence #COMPUTATION #LOGIC
Tipo

期刊论文