Dephasing rate in an InAs/GaAs single-electron quantum dot qubit
Data(s) |
2002
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Resumo |
We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Pan LX; Li SS; Liu JL; Niu ZC; Feng SL; Zheng HZ .Dephasing rate in an InAs/GaAs single-electron quantum dot qubit ,SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2002,45 (5):666-670 |
Palavras-Chave | #半导体物理 #quantum dot #quantum computing #decoherence #COMPUTATION #LOGIC |
Tipo |
期刊论文 |