Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors
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2008
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Resumo |
The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE. The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE. zhangdi于2010-03-09批量导入 zhangdi于2010-03-09批量导入 IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter. [Wang, Ying; Han, Weihua; Yang, Xiang; Chen, Jianjun; Yang, Fuhua] Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, Beijing 100083, Peoples R China IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
Fonte |
Wang, Y;Han, WH;Yang, X;Chen, JJ;Yang, FH.Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors .见:IEEE .2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,VOLS 1-4: 393-395 |
Palavras-Chave | #微电子学 #DEVICES |
Tipo |
会议论文 |