A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator


Autoria(s): Liao Zaiyi; Pan Jiaoqing; Zhou Fan; Bian Jing; Zhu Hongliang; Zhao Lingjuan; Wang Wei
Data(s)

2008

Resumo

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic "and" function with differ-ent load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinc-tion ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s.

National Natural Science Foundation of China (No. 9 4 1 25),国家自然科学基金资助项目(批准号:9 4 1 25)

Identificador

http://ir.semi.ac.cn/handle/172111/16081

http://www.irgrid.ac.cn/handle/1471x/102079

Idioma(s)

英语

Fonte

Liao Zaiyi;Pan Jiaoqing;Zhou Fan;Bian Jing;Zhu Hongliang;Zhao Lingjuan;Wang Wei.A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator,半导体学报,2008,29(5):898-902

Palavras-Chave #半导体器件
Tipo

期刊论文