InAs/GaAs single-electron quantum dot qubit


Autoria(s): Li SS; Xia JB; Liu JL; Yang FH; Niu ZC; Feng SL; Zheng HZ
Data(s)

2001

Resumo

The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/12030

http://www.irgrid.ac.cn/handle/1471x/64985

Idioma(s)

英语

Fonte

Li SS; Xia JB; Liu JL; Yang FH; Niu ZC; Feng SL; Zheng HZ .InAs/GaAs single-electron quantum dot qubit ,JOURNAL OF APPLIED PHYSICS,2001 ,90(12):6151-6155

Palavras-Chave #半导体物理 #PHASE BREAKING #LOGIC GATES #COMPUTATION #COMPUTERS #STATE
Tipo

期刊论文