InAs/GaAs single-electron quantum dot qubit
Data(s) |
2001
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Resumo |
The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li SS; Xia JB; Liu JL; Yang FH; Niu ZC; Feng SL; Zheng HZ .InAs/GaAs single-electron quantum dot qubit ,JOURNAL OF APPLIED PHYSICS,2001 ,90(12):6151-6155 |
Palavras-Chave | #半导体物理 #PHASE BREAKING #LOGIC GATES #COMPUTATION #COMPUTERS #STATE |
Tipo |
期刊论文 |