O amor no spinozismo e a política do comum

No plano de imanência de Spinoza, o amor é afeto expressivo de uma diferença que marca o trânsito a estados de maior perfeição ou realidade. A partir da compreensão do princípio de univocidade, a imanência se expressa na produção de diferenças. O amor de Deus serve como guia para a vida política conduzida pela razão. Não um Deus personalizado, mas como nome da potência (potentia). Se a multidão compreende adequadamente sua própria essência como direito ou potência natural de resistir à dominação e de se auto-organizar em liberdade, o amor surge como força vital de constituição do comum e leva à invenção de formas cada vez mais aperfeiçoadas de vida. A democracia emerge, por sua vez, como o mais natural dos regimes políticos, porque é o que mais convém com a natureza dos homens guiados pela razão. Assim, nas redes e nas ruas a multidão exercita a liberdade quando promove encontros alegres entre as singularidades que a compõem. Ao lado de um conhecimento adequado para a produção de graus maiores de liberdade, surge uma espécie de amor da multidão por sua própria essência ou potência, ou seja, a afirmação em si mesma da diferença, da abertura e da multiplicidade. Aqui, os afetos passivos que são promovidos pelas relações de dominação, como o medo, o ódio e a esperança, devem ceder lugar aos afetos ativos do amor à liberdade necessária para diferir-se. A alegria da multidão, enfim, deriva de sua potência ativa de criar formas de vida comum a partir da composição de singularidades múltiplas. No seio da produção biopolítica contemporânea, surgem novos horizontes para o combate de resistência e criação conjunta contra as formas de vida submetidas à servidão. Seguindo principalmente a linhagem spinozista de Antonio Negri e Gilles Deleuze, explora-se aqui as condições da experiência real que determinam a possibilidade de uma ética política do amor na contemporaneidade.

Role of rainfall in the breeding of Labeo rohita (Ham.), Cirrhinus mrigala (Ham.), Catla catla (Ham.), at Damdama (Haryana), a semi-arid zone

The role of several environmental factors on the breeding and hatching of fish has been studied by many earlier investigators. Perfection in the hypophysation technique has helped to some extent in by-passing the environmental variables such as temperature, light and rain. With the use of a modern fish hatchery, it is possible to attain maximum success in breeding and hatching, even without rains; reference is given to studies carried out regarding the role of rainfall in the breeding of Labeo rohita, Cirrhinus mrigala, Catla catla.

Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed. © 2005 IEEE.

Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass spectroscopy, and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed chemical vapor transport method. The results indicate that shallow donor impurities (Ga and Al) are the dominant native defects responsible for n-type conduction of the ZnO single crystal. PL and OA results suggest that the as-grown and annealed ZnO samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. The deep level defect in as-grown ZnO is identified to be oxygen vacancy. After high-temperature annealing, the deep level photoluminescence is suppressed in ZnO crystal with good lattice perfection. In contrast, the photoluminescence is nearly unchanged or even enhanced in ZnO crystal with grain boundary or mosaic structure. This result indicates that a trapping effect of the defect exists at the grain boundary in ZnO single crystal. (C) 2007 Elsevier B.V. All rights reserved.

Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals

Ce doped Bi12SiO20 single crystals were grown either on board of the Chinese Spacecraft-Shenzhou No.3 (SZ-3) or on the ground at the same conditions with the exception of microgravity. The surface morphology of crystals clearly showed significant differences between the space- and ground-grown portions. The space- and ground-grown crystals have been measured by X-ray rocking curve, Cc concentration distribution in growth direction, dislocation density, absorption spectrums. These results show that the compositional homogeneity and structural perfection of Ce doped crystal grown in space are obviously improved.

HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE

Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.

PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION

GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.

GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration

InxGa1-xAs/InP (0.39 less than or equal to x less than or equal to 0.68) strained-layer quantum wells having 20 wells with thickness of 50 Angstrom in a P-i-N configuration were grown by gas source molecular beam epitaxy (GSMBE). High-resolution X-ray diffraction rocking curves show the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. Low-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. Good agreement is achieved between exciton transition energies obtained experimentally at low temperature with those calculated using the deformation potential theory.

Wet etching and infrared absorption of AlN bulk single crystals

The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm~(-2) is observed on the (0001) A1 surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.

Seed-Mediated Growth of Nearly Monodisperse Palladium Nanocubes with Controllable Sizes

Nearly monodisperse Pd nanocubes with controllable sizes were synthesized through a seed-mediated growth approach. By using Pd nanocubes of 22 nm in size as seeds, the morphology of the as-grown nanostructures was fixed as single-crystalline, which enabled us to rationally tune the size of Pd nanocubes. The formation mechanism of initial 22 nm nanocubes was also discussed. The size-dependent surface plasmon resonance properties of the as-synthesized Pd nanocubes were investigated. Compared with previous methods, the yield, monodispersity, perfection of the shape formation, and the range of size control of these nanocubes are all improved.

Relating the molecular structure and crystallization behavior of polypropylene

The crystallization behavior of two polypropylene (PP) resins as used for biaxially oriented polypropylene (BOPP) and general injection mold applications, respectively, has been intensively investigated and compared by means of polarized light optical micrography (POM), differential scanning calorimetry (DSC), conventional transmission electron microscopy (TEM), and high resolution transmission electron microscopy (HRTEM). It is found that both molecular weight distribution and isotacticity of polypropylene strongly affect its crystallization characteristics, e.g., the number of crystal nuclei at the initial stage, crystallization dynamics, the morphology, size and perfection of crystals in the final product, and so on. The results indicate an appropriate molecular structure is vital in producing high-quality BOPP film.

Fractionated crystallization of dispersed PA6 phase of PP/PP-g-MAH/PA6 blends

Fractionated crystallization behavior of dispersed PA6 phase in PP/PA6 blends compatibilized with PP-g-MAH was investigated by scanning electron microscopy (SEM), differential scanning calorimeter (DSC), polarized light microscopy (PLM), and wide-angle X-ray diffraction (WAXD) in this work. The lack of usual active heterogeneities in the dispersed droplet was the key factor for the fractionated crystallization of PA6. The crystals formed with less efficient nuclei might contain more defects in the crystal structures than those crystallized with the usual active nuclei. The lower the crystallization temperature, the lesser the perfection of the crystals and the lower crystallinity would be. The fractionated crystallization of PP droplets encapsulated by PA6 domains was also observed. The effect of existing PP-g-MAH-g-PA6 copolymer located at the interface on the fractionated crystallization could not be detected in this work.

Morphology and thermal and mechanical properties of PBT/HIPS and PBT/HIPS-g-GMA blends

The modification of high-impact polystyrene (HIPS) was accomplished by melt-grafting glycidyl methacrylate (GMA) on its molecular chains. Fourier transform infrared spectroscopy and electron spectroscopy for chemical analysis were used to characterize the formation of HIPS-g-GMA copolymers. The content of GMA in HIPS-g-GMA copolymer was determined by using the titration method. The effect of the concentrations of GMA and dicumyl peroxide on the degree of grafting was studied. A total of 1.9% of GMA can be grafted on HIPS. HIPS-g-GNU was used to prepare binary blends with poly(buthylene terephthalate) (PBT), and the evidence of reactions between the grafting copolymer and PBT in the blends was confirmed by scanning electron microscopy (SEM), dynamic mechanical analysis, and its mechanical properties. The SEM result showed that the domain size in PBT/HIPS-g-GMA blends was reduced significantly compared with that in PBT/HIPS blends; moreover, the improved strength was measured in PBT/HIPS-g-GMA blends and results from good interfacial adhesion. The reaction between ester groups of PBT and epoxy groups of HIPS-g-GMA can depress crystallinity and the crystal perfection of PBT.

The polydispersity of ethylene sequence in metallocene ethylene/alpha-olefin copolymers III: crystallization and melting behavior of short ethylene sequence

Crystallization and melting behavior of short ethylene sequence of metallocene ethylene/alpha -olefin copolymer with high comonomer content have been studied by standard DSC and modulated-temperature differential scanning calorimetry (M-TDSC) technique. In addition to high temperature endotherm around 120 degreesC, a low temperature endotherm is observed at lower temperatures (40-80 degreesC), depending on time and temperature of isothermal crystallization. The peak position of the low temperature endotherm T-m(low) varies linearly with the logarithm of crystallization time and the slope, D, decreases with increasing crystallization temperature T-c. The T-m(low) also depends on the thermal history before the crystallization at T-c, and an extrapolation of T-m(low) (30.6 degreesC) to a few seconds has been obtained after two step isothermal crystallization before the crystallization at 30 degreesC. The T-m(low) is nearly equal to T-c, and it indicates that the initial crystallization at low temperature is nearly reversible. Direct evidence of conformational. entropy change of secondary crystallization has been obtained by using M-TDSC technique. Both the M-TDSC result and the activation energy analysis of temperature dependence suggest that crystal perfection process and conformational entropy decreasing in residual amorphous co-exist during secondary crystallization.