Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals


Autoria(s): Zhou YF; Pan ZL; Liu Y; Ai F; Chen NF; Huang YY; He W; Tang LA; Wang JC
Data(s)

2006

Resumo

Ce doped Bi12SiO20 single crystals were grown either on board of the Chinese Spacecraft-Shenzhou No.3 (SZ-3) or on the ground at the same conditions with the exception of microgravity. The surface morphology of crystals clearly showed significant differences between the space- and ground-grown portions. The space- and ground-grown crystals have been measured by X-ray rocking curve, Cc concentration distribution in growth direction, dislocation density, absorption spectrums. These results show that the compositional homogeneity and structural perfection of Ce doped crystal grown in space are obviously improved.

Identificador

http://ir.semi.ac.cn/handle/172111/10776

http://www.irgrid.ac.cn/handle/1471x/64584

Idioma(s)

英语

Fonte

Zhou YF; Pan ZL; Liu Y; Ai F; Chen NF; Huang YY; He W; Tang LA; Wang JC .Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals ,MICROGRAVITY SCIENCE AND TECHNOLOGY,2006,17(1):40244

Palavras-Chave #半导体材料
Tipo

期刊论文