INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION
Data(s) |
1991
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Resumo |
GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
LI CR; MAI ZH; CUI SF; ZHOU JM; WANG YT.INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION,JOURNAL OF APPLIED PHYSICS,1991,70(8):4172-4175 |
Palavras-Chave | #半导体材料 #CHEMICAL VAPOR-DEPOSITION #SOLAR-CELL APPLICATIONS #MOLECULAR-BEAM EPITAXY #SI #HETEROSTRUCTURES #SUPERLATTICES |
Tipo |
期刊论文 |