Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.

Wet etching and infrared absorption of AlN bulk single crystals

The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm~(-2) is observed on the (0001) A1 surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.

High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge waveguide AlGaInP laser diodes with compressive strained MQW active layer are formed by pure Ar ion beam etching process.Symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.The typical threshold current of these devices is 46mA at room temperature,and a stable fundamental-mode operation over 40mW is obtained.Very high slope efficiency of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

SOI Waveguides Fabricated by Wet-Etching Method

SOI waveguides fabricated by wet-etching method are demonstrated. The single mode waveguide and 1×2 3dB BBI splitter are analyzed and designed by three dimensional beam propagation method to correct the error of effective index method and guided mode method. The devices are fabricated. Excellent performances, such as low propagation loss of -1.37dB/cm, low excess of -2.2dB, and good uniformity of 0.3dB, are achieved.

Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE

Wet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90～300 ℃. It is found that different solution produces different etch figure on the surfaces of a sample. KOH-based solutions produce rectangular pits rather than square pits. The etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. In addition, it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c-GaN epilayers.

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

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Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Diffractive microlens with a cascade focal plane fabricated by single mask UV-photolithography and common KOH:H2O etching

A diffractive microlens with a cascade focal plane along the main optical axis of the device is fabricated using a low-cost technique mainly including single mask ultraviolet (UV) photolithography and dual-step KOH:H2O etching. Based on the evolutionary behavior of converse pyramid-shaped microholes (CPSMs) preshaped over a {100}-oriented silicon wafer in KOH etchant, the first-step KOH etching is performed to transfer initial square micro-openings in a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD) and patterned by single mask UV-photolithography, into CPSMs with needed dimension. After completely removing a thinned SiO2 mask, basic annular phase steps with a relatively steep sidewall and scheduled height can be shaped in the overlapped etching region between the neighboring silicon concave-arc microstructures evolved from CPSMs through the second-step KOH etching. Morphological measurements demonstrate a desirable surface of the silicon microlens with a roughness in nanometer scale and the feature height of the phase steps formed in the submicrometer range. Conventional optics measurements of the plastic diffractive microlens obtained by further hot embossing the fine microrelief phase map over the nickel mask made through a common electrochemical method indicate a highly efficient cascaded focusing performance.

An effective etching technique for polycarbonate/core-shell poly(butyl acrylate) poly(methyl methacrylate) blend

Two etching techniques are used to reveal the morphology of PC/PBA-cs-PMMA blend. One is based on acetic acid (CH3COOH) solutions, whereas the other uses CCl4/ C2H5OH (3/1 v/v). The latter approach shows to be more appropriate and successful for revealing the morphology of PC/PBA-cs-PMMA blend.

FABRICATION OF STM TIPS WITH CONTROLLED GEOMETRY BY ELECTROCHEMICAL ETCHING AND ECSTM TIPS COATED WITH PARAFFIN

We have presented two simple methods of ''unfixed-position shield'' and ''pulling out'' for making sharp STM Pt-Ir tips with low aspect ratio by electrochemical etching in KCN/NaOH aqueous solution and ECSTM tips coated with paraffin. By limiting the elec

Report on some species of Palaemonidae (Crustacea, Decapoda) from French Polynesia

Based on material collected from French Polynesia and deposited in the Museum national d'Histoire naturelle, Paris, the present paper reports 31 palaemonid shrimp species, which belong to the Palaemoninae (two genera, three species) and to the Pontoniinae (12 genera, 28 species), including six new species. The new species are: Izucaris crosnieri n. sp., Periclimenes alexanderi n. sp., P. josephi n. sp., P platydactylus n. sp., P polynesiensis n. sp. and P vicinus n. sp. Detailed descriptions and illustrations of the new species are provided. Besides the six new species, ten other species are recorded for the first time from French Polynesia: Exoclimenella maldivensis Duris & Bruce, 1995, Kemponia rapanui (Fransen, 1987) n. comb., Palaemonella crosnieri Bruce, 1978, P spinulata Yokoya, 1936, Periclimenaeus hecate (Nobili, 1904), P orbitocarinatus Fransen, 2006, Periclimenes aleator Bruce, 199 1, P paralcocki Li & Bruce, 2006, P uniunguiculatus Bruce, 1990, Pontonides loloata Bruce, 2005.

Strategic intelligence, Counter-Intelligence and Alliance Diplomacy in Anglo-French relations before the Second World War

Jackson, Peter, and Joe Maiolo, 'Strategic intelligence, Counter-Intelligence and Alliance Diplomacy in Anglo-French relations before the Second World War', Military History (2006) 65(2) pp.417-461 RAE2008

The French Second Empire: an anatomy of political power

Price, Roger, The French Second Empire: an anatomy of political power (Cambridge: Cambridge University Press, 2001), pp.x+507 RAE2008

Anglo-French and English Society in Chaucer's ?The Reeve's Tale?

Rothwell, W., 'Anglo-French and English Society in Chaucer's ?The Reeve's Tale?', English Studies (2006) 87(5) pp.511-538 RAE2008