Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching
| Data(s) |
1999
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| Resumo |
GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays. GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:58Z (GMT). No. of bitstreams: 1 2928.pdf: 282471 bytes, checksum: 7292481435c9426e7432665bc956da01 (MD5) Previous issue date: 1999 SPIE.; Nanyang Technol Univ.; SPIE, Singapore Chapter.; Inst Phys.; USAF, Asian Off Aerosp Res & Dev.; USA, Res Off Far E. Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China SPIE.; Nanyang Technol Univ.; SPIE, Singapore Chapter.; Inst Phys.; USAF, Asian Off Aerosp Res & Dev.; USA, Res Off Far E. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Wang XH; Song AM; Liu J; Cheng WC; Li GH; Li CF; Li YX; Yu JZ .Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching .见：SPIE-INT SOC OPTICAL ENGINEERING .PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1999,147-152 |
| Palavras-Chave | #光电子学 #GaAs/AlGaAs #quantum dot array #etching method #photoluminescence #WIRES |
| Tipo |
会议论文 |
