Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

Effect of water content in sol on optical properties of hybrid sol-gel derived TiO2/SiO2/ormosil film

Sol-gel derived TiO2/SiO2/ormosil hybrid planar waveguides have been deposited on soda-lime glass slides and silicon substrates, films were heat treated at 150 degreesC for 2 h or dried at room temperature. Different amounts of water were added to sols to study their impacts on microstructures and optical properties of films. The samples were characterized by m-line spectroscopy, Fourier transform infrared spectroscopy (FT-IR), UV/VIS/NIR spectrophotometer (UV-vis), atomic force microscopy (AFM), thermal analysis instrument and scattering-detection method. The refractive index was found to have the largest value at the molar ratio H2O/OR = 1 in sol (OR means -OCH3, -OC2H5 and -OC4H9 in the sol), whereas the thickest film appears at H2O/OR = 1/2. The rms surface roughness of all the films is lower than 1.1 nm, and increases with the increase of water content in sol. Higher water content leads to higher attenuation of film. (C) 2004 Elsevier B.V. All rights reserved.

Stress analysis of ZrO2/SiO2 multilayers deposited on different substrates with different thickness periods

The effects of repeating thickness periods on stress are studied in ZrO2/SiO2 multilayers deposited by electron-beam evaporation on BK7 glass and fused-silica substrates. The results show that the residual stress is compressive and decreases with an increase of the periods of repeating thickness in the ZrO2/SiO2 multilayers. At the same time, the residual stress in multilayers deposited on BK7 glass is less than that of samples deposited on fused silica. The variation of the microstructure examined by x-ray diffraction shows that microscopic deformation does not correspond to macroscopic stress, which may be due to variation of the interface stress. (c) 2005 Optical Society of America.

Effects of CO2 laser conditioning of the antireflection Y2O3/SiO2 coatings at 351 nm

Y2O3/SiO2 coatings were deposited on fused silica by electron beam evaporation. A continuous wave CO2 laser was used to condition parts of the prepared samples at different scanning speeds in the air. LAMBDA 900 spectrometer was used to investigate the changes of the transmittance and residual reflection spectrum. A Nomarski microscope under dark field was used to examine the changes of the micro defect density. The changes of the surface roughness and the microstructure of the film before and after conditioning were investigated by AFM and X-ray diffraction, respectively. We found that laser-induced damage threshold (LIDT) of the films conditioning at 30 mm/s scanning speed was increased by more than a factor of 3 over the thresholds of the as-deposited films. The conditioning effect was correlated with an irradiation-induced decrease of the defect density and absorption of the films. (c) 2005 Elsevier B.V. All rights reserved.

Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

Ta2O5／SiO2硬膜双腔滤光片激光损伤特性研究

研究了Ta2O5／SiO2硬膜双腔干涉滤光片带内、带边及带外的吸收和激光损伤特性。实验发现，对于作用激光，带通滤光片的驻波场分布、吸收率和损伤阈值在带内、带边和带外的响应特性对作用激光波长均呈现出明显的选择性。根据实验结果，结合滤光片的驻波场分析，给出了带通滤光片的损伤机理。

1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较

研究了电子束蒸发制备的HfO2／SiO2高反膜在1064nm与532nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑。当能量密度较大时出现分层剥落；二倍频激光损伤主要是由电子缺陷引起的平底坑，辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑，但电子缺陷的损伤阈值更低；随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为，辐照激光波长的变化。引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。

Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation

The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold (LIDT) is measured by a Nd:YAG laser at 355nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd: YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LID T of Al2O3 thin film.

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.

退火对HfO2/SiO2多层膜残余应力的影响

用电子束蒸发方法在BK7基底上沉积了HfO2/SiO2多层膜。研究了200℃到400℃的退火对残余应力的影响。结果表明退火前的薄膜残余应力为压应力，在200℃退火后发展为张应力，然后张应力值随着退火温度的升高而增大。在400℃退火后，由于张应力太大，薄膜表面出现了裂纹。同时，随着退火温度的升高，晶粒尺寸长大，晶面间距降低。残余应力的变化与结构的演变相对应。

Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films

A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO2 additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO2 overcoat and undercoat, yet was changed by adding an interlayer. SiO2 undercoat. The interlayer improved the LIDT greatly, whereas the SiO2 overcoat had little effect on the LIDT. (C) 2007 Elsevier Ltd. All rights reserved.

SiO2保护层和退火对Ta2O5薄膜激光损伤阈值影响的对比研究

Ta2O5薄膜采用传统的电子束蒸发方法沉积在BK7基底上。文中对SiO2保护层和退火对Ta2O5薄膜的激光损伤阈值的不同影响进行了研究。结果表明，SiO2保护层不会影响薄膜内的电场分布，薄膜微结构和微缺陷密度，但是会使薄膜的吸收稍微增大；而退火对降低薄膜的微缺陷密度和吸收较有效。SiO2保护层和退火都有利于提高Ta2O5薄膜的抗激光损伤能力，并且退火对提高阈值的影响更为明显。此外，采用SiO2保护层和退火结合的方法，获得了具有最大激光损伤阈值的薄膜。

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Investigation on thermal stability of TiO2 films for application at high temperature

The thermal stability of electron beam deposited TiO2 monolayers and TiO2/SiO2 high reflectors (HR) during 300 to 1100 degrees C annealing is studied. It is found that the optical loss of film increases with the increase in annealing temperature, due to the phase change, crystallisation and deoxidising of film. Scattering loss dominates the optical property degradation of film below 900 degrees C, while the absorption is another factor at 1100 degrees C. The increase in refractive index and decrease in physical thickness of TiO2 layer shift the spectra of HR above 900 degrees C. The possible crack mechanism on the surface of HR during annealing is discussed. Guidance for application on high temperature stable optical coatings is given.