High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al<inf>2</inf>O<inf>3</inf> SiO<inf>2</inf> films
Data(s) |
2008
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Resumo |
4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang Feng;Yang Weifeng;Huang Huolin;Chen Xiaping;Wu Zhengyun;Zhu Huili;Qi Hongji;姚建可;范正修;邵建达 .,Appl. Phys. Lett.,2008,92(25):251102- |
Palavras-Chave | #光学薄膜 #Metal-semiconductor- metal #Silicon carbide (SiC) #Ultra-violet #Ultra-violet photodetectors |
Tipo |
期刊论文 |