Influence of SiO<inf>2</inf> additional layers on the laser induced damage threshold of Ta<inf>2</inf>O<inf>5</inf> films


Autoria(s): Xu Cheng; Li Dawei; 麻健勇; Jin Yunxia; 邵建达; 范正修
Data(s)

2008

Resumo

A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO2 additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO2 overcoat and undercoat, yet was changed by adding an interlayer. SiO2 undercoat. The interlayer improved the LIDT greatly, whereas the SiO2 overcoat had little effect on the LIDT. (C) 2007 Elsevier Ltd. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/4738

http://www.irgrid.ac.cn/handle/1471x/12946

Idioma(s)

英语

Fonte

Xu Cheng;Li Dawei;麻健勇;Jin Yunxia;邵建达;范正修.,Opt. Laser Technol.,2008,40(3):545-549

Palavras-Chave #光学薄膜 #Ta2O5 films #laser induced damage threshold #absorption #SiO2 additional layers
Tipo

期刊论文