High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Microorganisms linked to Neoproterozoic microspar carbonate sedimentation in the Jilin-Liaoning area

Molar-tooth carbonate refers to a sort of rock that has ptygmatical folded structure comparable to the ivory. This kind of carbonate exists in a special time range (from Middle to Neoproterozoic). Its origin and the possibility to use it in stratigraphic correlation of the paleocontinent is the key task of the IGCP447, a project on Proterozoic molar tooth carbonates and the evolution of the earth (2001-2005). The importance lies in that the molar-tooth structure is the key to solving problems related to Precambrian biological and global geochemical events. The molar-tooth structure is associated with microorganisms. Development and recession of such carbonates have relations with the evolution process of early lives and abrupt changes in sea carbonate geochemistry. In recent years, based on researches on petrology, geochemistry and Sr isotope of molar-tooth carbonate in the Jilin-Liaoning and Xuzhou-Huaiyang area, the authors hold that it can be used as a marker for stratigraphic sequence and sedimentary facies analyses.

Information geometry theory of high-dimension space and application for speaker independent continuous digit speech recognition

In the light of descriptive geometry and notions in set theory, this paper re-defines the basic elements in space such as curve and surface and so on, presents some fundamental notions with respect to the point cover based on the High-dimension space (HDS) point covering theory, finally takes points from mapping part of speech signals to HDS, so as to analyze distribution information of these speech points in HDS, and various geometric covering objects for speech points and their relationship. Besides, this paper also proposes a new algorithm for speaker independent continuous digit speech recognition based on the HDS point dynamic searching theory without end-points detection and segmentation. First from the different digit syllables in real continuous digit speech, we establish the covering area in feature space for continuous speech. During recognition, we make use of the point covering dynamic searching theory in HDS to do recognition, and then get the satisfying recognized results. At last, compared to HMM (Hidden Markov models)-based method, from the development trend of the comparing results, as sample amount increasing, the difference of recognition rate between two methods will decrease slowly, while sample amount approaching to be very large, two recognition rates all close to 100% little by little. As seen from the results, the recognition rate of HDS point covering method is higher than that of in HMM (Hidden Markov models) based method, because, the point covering describes the morphological distribution for speech in HDS, whereas HMM-based method is only a probability distribution, whose accuracy is certainly inferior to point covering.

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.

Enhanced fiber Bragg grating sensor demodulation technique using cascade wavelength division multiplex couplers

An enhanced technique for interrogating fiber Bragg grating wavelength shift using cascade wavelength division multiplexer (WDM) couplers was proposed and demonstrated. Three WDM couplers which show a linear filter function over the expected wavelength range are employed and cascaded to track Bragg wavelength shifts. Compared with single WDM demodulator. sharper spectral slope is obtained and considerable linear filter range is kept. The static and dynamic strain sensor demodulation experiments demonstrated that the simple passive technique improves the sensitivity approximately two times and keeps 5nm linear demodulation range based on our devices. The cascade WDM coupler demodulation system has high scan rate which can be used to monitor fast vibration.

Optical properties of Mn+ doped GaAs

The above work was supported by the national Basic Research Program of China (2006cb604904, 2006cb604908), the hi-tech R & D program of China (2006aa03z0408, 2006aa03z0404), the scientific research Fund of Central South University of Forstry and Technology.

基于共享存储和Gzip的并行压缩算法研究

Gzip无损压缩算法.尽管gzip算法能够取得很好的压缩比,但它在分析和压缩编码的过程需要进行大量的计算.为了缩短压缩时间,提出了一种基于共享存储的并行压缩策略,采用OpenMP标准和"生产者/消费者"模型实现了gzip的并行压缩版本.在Beowulf集群中的一个SMP节点(双CPU)和曙光天阔服务器(4路双核)上的测试表明,并行化的gzip程序取得了极大的性能提升,尤其是大文件的压缩.

双色量子阱红外探测器大面阵芯片的研制

采用GaAs／AIGaAs和InGaAs／AIGaAs多量子阱，研制出了双色同像素读取结构的中波／长波量子阱红外探测器及160x128元中波／长波双色多量子阱红外探测器芯片。器件的材料结构生长是采用分子束外延技术，在5．08cm半绝缘GaAs衬底上完成的。发展了双色大面阵制备工艺。二维光栅的制备使用标准光刻和离子束刻蚀技术。在77K时，对量子阱红外探测器测试，得到中、长波段峰值探测率分别为Dλ=（1．61-1．90）x10~(10)cmHz~(1/2)W~-1和（1．54-2．67）x10^10cmHz~(1/2)W~-1)。中、长波段峰值波长分别为（2．7-3．8）μm和8．3μm。

采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件

为了进一步减小栅漏电,提高击穿电压,将MOS结构的优点引入ALGaN/GaN HEMT器件中,研制并分析了新型的基于AlGaN/GaN的 MOS-HFET结构.采用等离子增强气相化学沉积(PECVD)的方法生长了50 nm的SiO2作为栅绝缘层,新型的AlGaN/GaN MOS-HFET器件栅长1 μm,栅宽80 μm,测得最大饱和输出电流为784 mA/mm,最大跨导为44.25 ms/mm,最高栅偏压+6 V.

GAN_(1-x)P_x三元合金的MOCVD生长

用金属有机化学气相淀积技术在蓝宝石衬底上成功外延了高P组分的GaN_(1-x)P_x 三元合金。俄歇电子能谱深度剖面结果表明在GaN_(1-x)P_x 中P的掺入量最高达到20%且分布均匀；X射线光电子能谱价态分析证实了外延层中Ga-P键的存在。对不同P组分的GaN_(1-x)P_x 样品进行了低温光致发光（PL）测试，与来自GaN衬底的带边发射相比，随三元合金中P组分的变化，GaN_(1-x)P_x 的PL峰呈现出了不同程度的红移。在GaN_(1-x)P_x 的PL谱中没有观测到有关GaP的发射峰，表明该合金材料没有发生相分离。

VCD和DVD用全息光栅衍射效率的分析

在VCD和DVD中由于使用了全息光学元件，全息光学读出头的元件数量比传统光头的元件数量少。分析了光盘信号探测、聚焦、循迹原理。推出了光栅衍射效率的一般计算公式，并给出了光栅沟槽形状为“方波”时光栅衍射效率的计算公式，由此计算出了VCD和DVD实用的全息光学元件的蚀刻深度。

利用快速热退火在n-GaAs上形成Ge/pdge欧姆接触

利用Ge/Pd/GaAs结构和快速热退火工艺在n-GaAS上形成低阻的欧姆接触.研究了比接触电阻率与退火的温度和时间关系,400～500℃之间退火的欧姆接触的比接触电阻率为～10~(-6)Ω·cm~2.接触层的表面光滑、界面平整.利用俄歇电子谱(AES)和二次离子质谱(SLMS)揭示和讨论了比接触电阻率的欧姆接触形成的机理.