Optical properties of Mn+ doped GaAs

Autoria(s): Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Liao SZ (Liao Shuzhi); Zhang FS (Zhang Fasheng); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo)
Data(s)

2010
Resumo

The above work was supported by the national Basic Research Program of China (2006cb604904, 2006cb604908), the hi-tech R & D program of China (2006aa03z0408, 2006aa03z0404), the scientific research Fund of Central South University of Forstry and Technology.
Identificador

http://ir.semi.ac.cn/handle/172111/13475

http://www.irgrid.ac.cn/handle/1471x/66251
Fonte

Zhou HY (Zhou Huiying), Qu SC (Qu Shengchun), Liao SZ (Liao Shuzhi), Zhang FS (Zhang Fasheng), Liu JP (Liu Junpeng), Wang ZG (Wang Zhanguo).Optical properties of Mn+ doped GaAs.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,2010,4(6):784-787
Palavras-Chave #半导体材料 #Photoluminescence #Ion implantation #Manganese #GaAs #ION-IMPLANTATION #SEMICONDUCTORS #CENTERS #DOTS
Tipo

期刊论文
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