High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region
Data(s) |
2008
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Resumo |
High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang, ZY ; Hogg, RA ; Jin, P ; Choi, TL ; Xu, B ; Wang, ZG .High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region ,IEEE PHOTONICS TECHNOLOGY LETTERS,2008 ,20(40068): 782-784 |
Palavras-Chave | #半导体材料 #molecular beam epitaxy (MBE) #quantum dots (QDs) #superlumineseent light-emitting diodes (SLEDs) |
Tipo |
期刊论文 |