High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region


Autoria(s): Zhang, ZY; Hogg, RA; Jin, P; Choi, TL; Xu, B; Wang, ZG
Data(s)

2008

Resumo

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Identificador

http://ir.semi.ac.cn/handle/172111/6606

http://www.irgrid.ac.cn/handle/1471x/63041

Idioma(s)

英语

Fonte

Zhang, ZY ; Hogg, RA ; Jin, P ; Choi, TL ; Xu, B ; Wang, ZG .High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region ,IEEE PHOTONICS TECHNOLOGY LETTERS,2008 ,20(40068): 782-784

Palavras-Chave #半导体材料 #molecular beam epitaxy (MBE) #quantum dots (QDs) #superlumineseent light-emitting diodes (SLEDs)
Tipo

期刊论文