带隙法测定SiGe／Si材料的应变状态

从固体模型理论的结果出发，计算了生长于Si（100）衬底上x值小于0．85的Si1-xGex合金材料（能带结构为类蛳结构）的间接带隙与应变的关系，结果表明，应变的SiGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系．基于这一结果，提出了用测量带隙来间接测定SiGe／Si应变状态的方法．用带隙法和x射线双晶衍射法测量了不同应变状态下的SiGe／Si多量子阱材料的应变弛豫度，两者可以较好的符合，表明带隙法测量SiGe应变弛豫度是可行的．

Si基热光可调谐窄带平顶滤波器

利用Si基键合技术、台阶型F-P腔结构以及Si良好的热光效应，研制了一种新型全Si基的热光调谐窄带平顶滤波器．器件的平顶宽度为2nm，3dB带宽为4．4nm，自由谱宽约为8．5nm，在外加电场作用下，共振峰红移3．3nm．

Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD

High quality ZnO films are successfully grown on Si（100） substrates by metal-organic chemical vapor deposition at 300℃. The effects of the thickness of the ZnO films on crystal structure, surface morphology,and optical properties are investigated using X-ray diffraction, scanning probe microscopy,and photoluminescence spectra, respectively. It is shown that the ZnO films grown on Si substrates have a highly-preferential C-axis orientation,but it is difficult to obtain the better structural and optical properties of the ZnO films with the increasing of thickness. It is maybe due to that the grain size and the growth model are changed in the growth process.

LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications

This paper presents the development of LPCVD growth of 3C-SiC thin films grown on Si mesas and thermally oxidized SiO2 masks over Si with an area of 150 × 100μm^2 and SiO2/Si substrates. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2. 3C-SiC films on these substrates were characterized by optical microscopy, X-ray diffraction （ XRD ）, X-ray photoelectron spectroscopy （ XPS ）, scanning electron microscopy （SEM） and room temperature Hall effect measurements. It is shown that there were no voids at the interface between 3C-SiC and SiO2.

16×0．8nm Si基SiO2阵列波导光栅设计、制备及测试

叙述了一个完整的16通道硅基二氧化硅阵列波导光栅(AWG)的设计、制备及测试过程。通道间隔为0．8nm(100GHz)，解复用器的插入损耗为16．8dB，其中材料损耗为11．95dB，相邻通道串扰小于一17dB，通道插损非均匀性小于2．2dB。

p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池

报道了选用厚度为0．05mm的不锈钢箔作衬底，B掺杂P型氢化纳米硅作窗口层，制备成功开路电压和填充因子分别达到0．90V和0．70的nip非晶硅基薄膜单结太阳电池．UV-VIS透射谱和微区Raman谱证实所用p层具有典型氢化纳米硅的宽能隙和含有硅结晶颗粒的微结构特征．明确指出导致这种氢化纳米硅能隙展宽的物理机制是量子尺寸效应．

SiO2/Si波导应力双折射数值分析

采用有限元法对SiO2/Si掩埋光波导制备工艺中的应力变化进行了系统的分析,在此基础上,应用有限差分束传播法(FDBPM)对应力光波导的双折射进行了计算.结果表明上包层的玻璃化过程是SiO2/Si波导形成水平方向和垂直方向应力差的主要原因,相应的应力双折射系数B在10-4量级.进一步的分析表明上包层B,P重掺杂可明显减小波导的双折射系数.

用于光网络通信的Si基光子集成器件的研究

报导了可用于光网络系统终端OADM和OXC的Si基长波长量子阱窄带响应光电接收器，MOEMS和F-P TO宽频域光学滤波器，M—Z型TO光开关和MMI多路分束器以及可变光强衰减器．用应变层SiGe/Si MQW研制的RCE光电接收器响应谱半宽FWHM<6mm，外量子效率η>4．2％；采用表面微机械加工的桥式光学滤波器，当外加电压0→50V，连续可调谐范围达90nm；采用全平面工艺研制的F-P腔TO滤波器，当外加电流0→57mA时，连续可调谐范围达23nm，FWHM<0．5nm．在SOI Si基片上研制的M—ZTO波导光开关，开关时间<30μs，功耗～100mW．开关消光比-13dB和-10dB，1×4MMI多路分束器输出光场的不均衡性<0．36dB，总插入损耗6．9dB．用背向对接的MMI构成的M-Z干涉仪实现了光强的可变调最大衰减量26dB，响应时间100μs，插入损耗4．8～7dB．