Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD


Autoria(s): Shen Wenjuan; Wang Jun; Duan Yao; Wang Qiyuan; Zeng Yiping
Data(s)

2005

Resumo

High quality ZnO films are successfully grown on Si(100) substrates by metal-organic chemical vapor deposition at 300℃. The effects of the thickness of the ZnO films on crystal structure, surface morphology,and optical properties are investigated using X-ray diffraction, scanning probe microscopy,and photoluminescence spectra, respectively. It is shown that the ZnO films grown on Si substrates have a highly-preferential C-axis orientation,but it is difficult to obtain the better structural and optical properties of the ZnO films with the increasing of thickness. It is maybe due to that the grain size and the growth model are changed in the growth process.

Identificador

http://ir.semi.ac.cn/handle/172111/16887

http://www.irgrid.ac.cn/handle/1471x/103081

Idioma(s)

英语

Fonte

Shen Wenjuan;Wang Jun;Duan Yao;Wang Qiyuan;Zeng Yiping.Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD,半导体学报,2005,26(11):2069-2073

Palavras-Chave #半导体材料
Tipo

期刊论文