形成优质Si＋注入SI-GaAs层的研究

在GaAs集成电路研制中需要高电激活率、高迁率的n型薄层。该文研究了Si~+注入GaAs形成的n型层光电特性与材料参量、注入和退火条件的关系。结果表明材料生长中的杂质污染和缺陷对注入层电特性有直接影响。材料或退火过程中As和Ga的原子比[As]/[Ga]稍大时,注入层中电激活率和迁移率都高。实验还证明,~(29)Si~+注入时BF~+束流的影响会使注入层电激活率和迁移率下降。指出注入时剂量不宜过大,白光快速退火时温度不宜过高,一般在960℃ 5秒退火为佳。

Defects in GaSb studied by coincidence Doppler broadening measurements

Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

High-concentration hydrogen in unintentionally doped GaN

We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.

沈阳市城市扩展分析与模拟研究

城市扩展及其导致的土地利用/土地覆被变化作为全球环境变化的重要驱动因素，日益引起社会各界的普遍关注。新中国成立以来，沈阳市经历了快速的城市化过程，特别是进入21世纪以来，伴随着人口增长和经济发展，中心城区持续向外扩张，导致基本农田大量流失，区域景观和生态环境质量日益下降，给沈阳市的城市增长管理和可持续发展带来严峻挑战。 利用遥感(RS)、地理信息系统(GIS)和空间Logistic回归模型对1988-2004年间沈阳市的城市扩展与土地利用变化特征及其驱动力进行深入分析，并在此基础上利用基于细胞自动机(CA)的城市扩展模型－SLEUTH对历史时期(1988-2004年)的城市扩展格局进行模拟与重建，对未来(2005-2030年)不同发展条件下的城市扩展进行模拟与环境影响评估，以期为城市增长管理与区域可持续发展提供决策支持。本论文取得如下研究成果： (1) 1988-2004年间，沈阳市辖区城市面积持续增加，城市扩展强度逐渐增强；2000-2004年城市扩展规模和强度都达到最大；沈阳市城市化进程正在显著加速。城市扩展具有明显的空间分异特征：整个研究时段内，市区西南方向是城市扩展的主方向，中心城区周边(8~10km)及各级经济开发区是扩展的热点区域。 (2) 1988-2004年间，沈阳市辖区土地利用变化最主要的特征是耕地向城乡建设用地的大面积转换。持续的城市扩展导致区域景观日益破碎化和复杂化。城市和其它建设用地的景观影响日益增强，耕地的优势地位减弱，且破碎化程度增加，斑块形状日趋复杂。城市化空间梯度上的土地利用格局变化分析表明，随着城市化水平的提高，景观组成和空间配置发生了明显变化。处在城市化前沿区域的城郊地区，景观格局表现出景观多样性增加、破碎化程度加深和形状日趋复杂等特点。 (3) 1988-2004年间，沈阳市辖区城市扩展主要受到社会经济发展的推动作用和政策因素的激励与导向作用。空间Logistic回归分析显示，开发区建设与行政建制变化、道路与城镇分布、浑河和城市规划是城市空间扩展的主要影响因素。 (4) ROC曲线统计、Kappa统计与多分辨率误差估算以及景观指数从城市扩展总体预测能力、增长数量、空间位置和空间格局上给予SLEUTH模型一个全面、客观的评估。总体上来说，SLEUTH模型具有可信精度，较好地表达了沈阳市1988-2004年间城市扩展的总体趋势，对城市扩展面积的拟合精度很高。但是，与其它城市扩展模型相似，在像元尺度上对城市扩展空间位置的预测和对城市空间格局的表达还有待于提高；随着分辨率的降低，模型对城市发展中空间邻域关系的表达效果趋于提高。SLEUTH模型对城市扩展的总体模拟精度要高于空间Logistic回归模型，但是对城市扩展位置的模拟准确性低于后者。 (5) 通过分析发现，影响SLEUTH模拟准确性的主要因素包括模型结构、地方城市发展特征、模型应用的时空尺度和模型输入数据的获取与误差传递等。通过修改模型组分设置、开展模型敏感性与不确定性分析以及实行城市扩展一体化模拟可以提高SLEUTH模型的模拟效力，而具体实现方法需要深入研究。基于模型评估结果和效力提高的对策，对城市扩展演变的时空格局进行了较为准确的重建，为其相关研究提供了可靠的历史数据资料。 (6) 遵循沈阳市目前和未来的区域开发政策、最新修编的城市总体规划，以及社会对区域生态环境保护的要求，设计了五个城市发展预案，即目前趋势发展预案(CT)、区域开发政策与城市规划预案(PP)、生态可持续发展预案(ES)、紧凑式发展格局预案(CD)和特定增量发展预案(GA)。对不同预案条件下未来(2004-2030年)城市扩展面积和空间格局、城市扩展热点区域、城市景观格局变化及其景观生态效应，以及对其它类型土地资源的消耗四个方面进行了分析和比较，为沈阳市城市规划、生态建设以及可持续增长管理提供了许多有价值的决策信息。