Self-assembled quantum dots, wires and quantum-dot lasers
Data(s) |
2001
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Resumo |
Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved. Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:20导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:20Z (GMT). No. of bitstreams: 1 2924.pdf: 296481 bytes, checksum: 00b18fb8c319d32c1e660fd8a480334a (MD5) Previous issue date: 2001 China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Fonte |
Wang ZG; Chen YH; Liu FQ; Xu B .Self-assembled quantum dots, wires and quantum-dot lasers .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,1132-1139 |
Palavras-Chave | #半导体材料 #low dimensional structures #strain #molecular beam epitaxy #quantum dots #semiconducting III-V materials #laser diodes #WELL LASERS |
Tipo |
会议论文 |