涌泉根灌湿润体特征值变化规律研究

在米脂山地微灌枣树示范基地进行原状土涌泉根灌入渗试验,研究了不同流量、不同灌水历时条件下涌泉根灌湿润体特征值的变化规律。结果表明:湿润体的水平扩散半径、向上入渗距离、向下入渗深度随流量的增大而增大,且均与入渗时间有显著的幂函数关系;在相同流量情况下,向上入渗最快,水平扩散次之,向下入渗最慢;湿润体体积受灌水量和流量的影响;在不同流量条件下,湿润体体积与灌水量间,湿润体水平扩散半径、垂直扩散距离与灌水量间均存在极显著的幂函数关系;针对五年生枣树根系分布特征,确定了枣树适宜灌水时间和灌水量。

长武塬区不同土地利用条件下土壤水分深剖面分布特征比较

通过调查取样的方法对长武塬面不同土地利用条件下(作物地,果园,苜蓿地)土壤水分状况在0~600 cm范围深度内进行对比,结果显示:长武塬区小麦收获期,不同土地利用条件下土壤水分含量总体存在较大差异,其中春玉米地由于上年小麦收获后直到春玉米播种前土地休闲,土壤含水量显著高于其它土地利用方式。其它土地利用条件下土壤平均含水量相对较低,在0~300 cm的范围内含水量分布表现为果园>苜蓿地>小麦地。300 cm以下含水量表现为小麦地>果园>苜蓿地;同时,不同利用条件下土壤水分剖面低湿层的位置深度也不相同,小麦地土壤水分低湿层深度较果园地和多年苜蓿地浅,土壤水分剖面形态与分布特征受利用模式影响显著。

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.

The cost estimate for a novel cheap solar cell

The estimate for the lowest cost of SODL (silicon on defect layer) solar cell is made according to the price standard of present market. The estimate shows that the PV (photovoltaics) energy costs can be reduced from today's 25-30 cents/(kW h) to 7-8 cents/(kW h) which is comparable with the present cost of electricity generated by traditional energy sources such as fossil and petroleum fuels. The PV energy costs could be reduced to a value lower than 7-8 cents(kW h) by developing SODL technology. The SODL solar cell manufacture featuring simple processes is suitable to large scale automated assembly lines with high yield of large area cells. Some new ideas are suggested, favoring the further reduction in the cost of commercial solar cells.

Design and Fabrication of Ultracompact 3-dB MMI Coupler in Silicon-on-Insulator

An ultracompact 3-dB coupler is designed and fabricated in silicon-on-insulator,based on 12 line tapered multimode interference(MMI) coupler.Comparing with the conventional straigth MMI coupler,the device is-40% shorter in length.The device exhibits uniformity of 1.3dB and excess loss of 2.5dB

GAN_(1-x)P_x三元合金的MOCVD生长

用金属有机化学气相淀积技术在蓝宝石衬底上成功外延了高P组分的GaN_(1-x)P_x 三元合金。俄歇电子能谱深度剖面结果表明在GaN_(1-x)P_x 中P的掺入量最高达到20%且分布均匀；X射线光电子能谱价态分析证实了外延层中Ga-P键的存在。对不同P组分的GaN_(1-x)P_x 样品进行了低温光致发光（PL）测试，与来自GaN衬底的带边发射相比，随三元合金中P组分的变化，GaN_(1-x)P_x 的PL峰呈现出了不同程度的红移。在GaN_(1-x)P_x 的PL谱中没有观测到有关GaP的发射峰，表明该合金材料没有发生相分离。

半导体集成光子学的研究与进展

文章从光子器件功能集成，光子器件面阵集成、光子集成PIC互连等三个方面探讨了半导体集成光学的重大进展。并对今后的发展前景作了展望。

Si（337）-另一个较稳定的高密勒指数晶面

于2010-11-23批量导入

GaInAs/AlInAs多量子阱结构光学性质的研究

于2010-11-23批量导入

Cooperative spontaneous emission of excitons in the semiconductor microcavity

We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP VCSEL from 30K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. These experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. From this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.

High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.

The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers

The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step.