The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers
Data(s) |
1998
|
---|---|
Resumo |
The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step. The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:22Z (GMT). No. of bitstreams: 1 3048.pdf: 359328 bytes, checksum: e3fcd9be41d1dd8c2b42e773572f3559 (MD5) Previous issue date: 1998 SPIE.; COS.; COEMA. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China SPIE.; COS.; COEMA. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Fonte |
Huang YZ .The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR LASERS III, 3547,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,136-143 |
Palavras-Chave | #半导体物理 #vertical-cavity lasers #spontaneous emission factor #laser modes #AlAs oxidation |
Tipo |
会议论文 |