Suckers (Fish, Catostomidae) from the Eocene of China account for the family's current disjunct distributions

Unequivocal Eocene suckers from China are for the first time reported here. This discovery demonstrates that catostomids of the Eocene Epoch (some 55-35 Ma ago) are scattered widely on mainland Asia as well as western North America. The present day disjunct distribution pattern of catostomids, with 68 extant species widespread in North America and the northern part of Middle America and only two in the restricted areas of Asia, is the result of their post-Eocene decline in Asia due to the competitive pressure from cyprinids, their Late Cenozoic radiation in North America, and the vicariant and dispersal events triggered by the changed biogeographic landscape. All of these prove to be a historical product of the geological, biological, and climatic changes throughout the Cenozoic.

Sequence of genome segments 1, 2, and 3 of the grass carp reovirus (Genus Aquareovirus, family Reoviridae)

The genome segments 1, 2, and 3 of the grass carp reovirus (GCRV), a tentative species assigned to genus Aquareouirus, family Reouiridae, were sequenced. The respective segments 1, 2, and 3 were 3949, 3877, and 3702 nucleotides long. Conserved moths 5' (GUUAUUU) and 3' (UUCAUC) were found at the ends of each segment. Each segment contains a single ORF and the negative strand does not permit identification of consistent ORFs. Sequence analysis revealed that VP2 is the viral polymerase, while VPI might represent the viral guanyly/methyl transferase (involved in the capping process of RNA transcripts) and VP3 the NTPase/helicase (involved in the transcription and capping of viral RNAs), The highest amino acid identities (26-41%) were found with orthoreovirus proteins. Further genomic characterization should provide insight about the genetic relationships between GCRV, aquareoviruses, and orthoreoviruses, It should also permit to precise the taxonomic status of these different viruses. (C) 2000 Academic Press.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]

Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures

Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068418]

Solid-state qubit measurement with single electron transistors

In this paper we consider the continuous weak measurement of a solid-state qubit by single electron transistors (SET). For single-dot SET, we find that in nonlinear response regime the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically on any linear response detectors. We understand the violation by means of the cross-correlation of the detector currents. For double-dot SET, we discuss its robustness against wider range of temperatures, quantum efficiency, and the relevant open issues unresolved.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

具有复合埋层的新型SIMON材料的制备

采用氮氧共注入方法制备了新型的SIMON(separation by implanted oxygen and nitrogen)SOI材料.采用不同的制备方法分别制作出样品并进行了结构测试和分析,发现SIMON材料的结构和质量对注入条件和退火工艺非常敏感.并对各种氮氧复合注入技术做了分析和比较,发现氮氧分次注入可以得到更好的结构和性能.

注氮剂量对SIMON材料性能影响的研究

采用氧氮共注的方法制备了氮氧共注隔离 SOI (SIMON) 圆片,对制备的样品进行了二次离 子质谱和透射电镜分析,并对埋层结构与抗辐射性能的机理进行了分析.结果表明,注氮剂量较低 时埋层质量较好.机理分析结果表明,圆片的抗辐照性能与埋层质量之间存在很密切的关系,埋层 的绝缘性能是影响器件抗辐射效应的关键因素.

Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy

The effect of thermal annealing on the Raman spectrum of Si0.33Ge0.67 alloy grown on Si (100) by molecular beam epitaxy is investigated in the temperature range of 550-800 degrees C. For annealing below 700 degrees C, interdiffusion at the interface is negligible and the residual strain plays the dominant role in the Raman shift. The strain-shift coefficients for Si-Ge and Ge-Ge phonon modes are determined to be 915 +/- 215 cm(-1) and 732 +/- 117 cm(-1), respectively. For higher temperature annealing, interdiffusion is significant and strongly affects the Raman shift and the spectral shape.

Stoichiometry in GaAs grown in outer space measured nondestructively

A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates

We show that part of the reflectance difference resonance near the E-0 energy of ZnSe is due to the anisotropic in-plane strain in the ZnSe thin films, as films grown on three distinctly different substrates, GaAs, GaP, and ZnS, all show the resonance at the same energy. Such anisotropic strain induced resonance is predicted and also observed near the E-1/E-1+Delta(1) energies in ZnSe grown on GaAs. The theory also predicts that there should be no resonance due to strain at, the E-0+Delta(0) energy, which is consistent with experiments. The strain anisotropy is rather independent of the ZnSe layer thickness, or whether the film is strain relaxed. For ZnSe films with large lattice mismatch with substrates, the resonance at the E-1/E-1+Delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (C) 2000 American Vacuum Society. [S0734-211X(00)05604-3].

X(3915) and X(4350) as New Members in the P-Wave Charmonium Family

The analysis of the mass spectrum and the calculation of the strong decay of P-wave charmonium states strongly purport to explain the newly observed X(3915) and X(4350) as new members in the P-wave charmonium family, i.e., chi'(c0) for X(3915) and chi ''(c2) for X(4350). Under the P-wave charmonium assignment to X(3915) and X(4350), the J(PC) quantum numbers of X(3915) and X(4350) must be 0(++) and 2(++) respectively, which provide important criteria to test the P-wave charmonium explanation for X(3915) and X(4350) proposed by this Letter. The decay behavior of the remaining two P-wave charmonium states with the second radial excitation is predicted, and an experimental search for them is suggested.