Stoichiometry in GaAs grown in outer space measured nondestructively

A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.

于2010-10-29批量导入

Made available in DSpace on 2010-10-29T06:36:59Z (GMT). No. of bitstreams: 0 Previous issue date: 1999

Amer Soc Nondestruct Testing.; NASA, Langley Res Ctr.; Natl Sci Fdn.; USN, Off Res.; USA, Res Off Far E.; USAF, Asian Off Aerosp R&D.; USN, Off Res Int Field Off Asia.

Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

Amer Soc Nondestruct Testing.; NASA, Langley Res Ctr.; Natl Sci Fdn.; USN, Off Res.; USA, Res Off Far E.; USAF, Asian Off Aerosp R&D.; USN, Off Res Int Field Off Asia.