Research on nitrogen implantation energy dependence of the properties of SIMON materials
Data(s) |
2006
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Resumo |
With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved. With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 Amer Vacuum Soc, NE Calif Chapter. Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China; Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China Amer Vacuum Soc, NE Calif Chapter. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Fonte |
Zhang, EX; Sun, JY; Chen, J; Chen, M; Zhang, ZX; Li, N; Zhang, GQ; Wang, X .Research on nitrogen implantation energy dependence of the properties of SIMON materials .见:ELSEVIER SCIENCE BV .NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,JAN 2006,242 (1-2): 585-587 |
Palavras-Chave | #半导体器件 #nitrogen |
Tipo |
会议论文 |