A 1.1GHz LC VCO with Automatic Amplitude Control for Tuner Applications

This paper presents an LC VCO with auto-amplitude control （AAC）, in which pMOS FETs are used,and the varactors are directly connected to ground to widen the linear range of Kvco. The AAC circuitry adds little noise to the VCO but provides it with robust performance over a wide temperature and carrier frequency range.The VCO is fabricated in a chartered 50GHz 0.35μm SiGe BiCMOS process. The measurements show that it has - 127. 27dBc/Hz phase noise at 1MHz offset and a linear gain of 32.4MHz/V between 990MHz and 1.14GHz.The whole circuit draws 6. 6mA current from 5V supply.

A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

On the nature of iron in InP: A FTIR study

Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.

Influence of open-tube Ga diffusion on the characteristics for thyristor

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots

N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure.

Oscillation flow induced by underwater supersonic gas jets

This paper describes an experimental study on the oscillation flow characteristics of submerged supersonic gas jets issued from Laval nozzles. The flow pattern during the jet development and the jet expansion feedback phenomenon are studied using a high-speed camera and a pressure measurement system. The experimental results indicate that along the downstream distance, the jet has three flow regimes: (1) momentum jet; (2) buoyant jet; (3) plume. In the region near the nozzle exit a so-called bulge phenomenon is found. Bulging of the jet occurs many times before the more violent jet expansion feedback occurs. During the feedback process, the jet diameter can become several times that of the original one depending on the jet Mach number. The frequencies of the jet bulging and the jet expansion feedback are measured.

高速列车气动噪声的计算研究

通过对高速列车气动噪声产生的关键部位进行简化抽象,对其产生的噪声进行了数值分析.该文着重讨论了两个主要的简化模型,即二维后台阶问题以及三维圆柱绕流问题.对后台阶问题进行数值模拟时采用了NLAS和 LES两种不同的方法,并同实验值进行了比较.对三维圆柱绕流问题则直接采用NLAS方法耦合FW-H声音传播方程进行了数值模拟.以此对高速列车气动噪声的机理进行了分析,并对适合于高速列车气动噪声计算的方法进行了选择

Modal correction for fiber-coupling efficiency in free-space optical communication systems through atmospheric turbulence

High-speed free-space optical communication systems have recently used fiber-optical components. The coupling efficiency with which the received laser beam can be coupled into a single-mode fiber is noticeably limited by atmospheric turbulence due to the degradation of its spatial coherence. Fortunately, adaptive optics (AO) can alleviate this limitation by partially correcting the turbulence-distorted wavefront. The coupling efficiency improvement provided by Zernike modal AO correction is numerically evaluated. It is found that the first 3-20 corrected polynomials can considerably improve the fiber-coupling efficiency. The improvement brought by AO is compared with that brought by a coherent fiber array. Finally, a hybrid technique that integrates AO and a coherent fiber array is proposed. Results show that the hybrid technique outperforms each of the two above-mentioned techniques. (C) 2009 Elsevier GmbH. All rights reserved.

Instabilities in a non-transferred direct current plasma torch operated at reduced pressure

Using an oscilloscope, a high-speed video camera and a double-electrostatic probe system, the periodicity and amplitude of the fluctuations in arc voltage, jet luminance and ion saturation current of a plasma jet were monitored to investigate various sources of instabilities and their effects in a non-transferred dc plasma torch operated at reduced pressure. The results show that besides a 300 Hz main fluctuation inherited from the power supply, arc voltage fluctuation of 3–4 kHz with an amplitude less than 5% of the mean voltage was mainly affected by the total gas flow rate. The arc voltage fluctuation can affect the energy distribution of the plasma jet which is detectable by electrostatic probes and a high-speed video camera. The steadiness of energy transfer is also affected by the laminar or turbulent flow state of the plasma.

Plasma and electrode emissions from a 1 kW hydrogen-nitrogen arcjet thruster

Arc root behavior affects the energy transfer and nozzle erosion in an arcjet thruster. To investigate the development of arc root attachment in 1 kW class N2 and H2-N2 arcjet thrusters from the time of ignition to the stably working condition, a kinetic series of end-on view images of the nozzle obtained by a high-speed video camera was analyzed. The addition of hydrogen leads to higher arc voltage levels and the determining factor for the mode of arc root attachment was found to be the nozzle temperature. At lower nozzle temperatures, constricted type attachment with unstable motions of the arc root was observed, while a fully diffused and stable arc root was observed at elevated nozzle temperatures.

AD7690在高精度数字电源上的应用

This paper contains the performance , principles of AD7690 and application design based on TMS320F2808 MCU. AD7690 ’s characters of high speed and high precision satisfy the requirement s of accelerator digital power supply.中文摘要：介绍了 AD7690 的主要性能、 工作原理 ,给出了应用电路以及在 TMS320F2808 上的数字接口设计。AD7690 的高速、 高精度特点适合加速器高精度数字电源方案。