Influence of open-tube Ga diffusion on the characteristics for thyristor
| Data(s) |
1998
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|---|---|
| Resumo |
Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics. Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:20Z (GMT). No. of bitstreams: 1 3041.pdf: 215304 bytes, checksum: 388c66565b336049970f21c9cfea340c (MD5) Previous issue date: 1998 Mat Res Soc. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China Mat Res Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
MATERIALS RESEARCH SOCIETY 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA |
| Fonte |
Wen RM; Pei SH .Influence of open-tube Ga diffusion on the characteristics for thyristor .见：MATERIALS RESEARCH SOCIETY .POWER SEMICONDUCTOR MATERIALS AND DEVICES, 483,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1998,219-222 |
| Palavras-Chave | #半导体材料 |
| Tipo |
会议论文 |
