Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots

N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure.

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Made available in DSpace on 2010-11-14T13:54:49Z (GMT). No. of bitstreams: 1 Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots.pdf: 999075 bytes, checksum: b27ceb584e1f274366a2af7cb03bb016 (MD5) Previous issue date: 2010

The authors greatly acknowledge the support from the National Basic Research Program of China (973 Program) under the grant number 2010CB934104, and National Natural Science Foundation of China under the grant number of 60606024.

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The authors greatly acknowledge the support from the National Basic Research Program of China (973 Program) under the grant number 2010CB934104, and National Natural Science Foundation of China under the grant number of 60606024.