Collective excitations in the coupled quantum wires

The dielectric response of an electron system composed of an array of parallel quantum wires with weak coupling and strong coupling are studied, and the dispersions of the collective excitations and the single particle excitations (SPE) as functions of wave-vectors are given. It is found that for the nearly isolated quantum wires with several subbands occupation, there are a series of intra-subband collective excitations between corresponding intra-subband SPE spectra. There also exist inter-subband collective excitations when q(x) not equal 0 (q(x) is the wave-vector component in the modulation direction), whose energies are close by the corresponding inter-subband SPE spectra. The energy of the intra-subband mode decreases and that of inter-subband mode increases with q(x) increasing. The collective excitation dispersions show obvious anisotropy in the 1D quantum limit. The calculated results agree with the experiment well. The coupling between quantum wires affects markedly both the collective and single-particle excitations spectra. The system changes to a near-two-dimensional electron system gradually with increasing coupling.

Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots

Within the framework of the single-band effective-mass envelope-function theory, the effect of electric field on the electronic structures of pyramidal quantum dot is investigated. Taking the Coulomb interaction between the heavy holes and electron into account, the quantum confined Stark shift of the exciton as functions of the strength and direction of applied electric field and the size of the quantum dot are obtained. An interesting asymmetry of Stark shifts around the zero field is found. (C) 1997 Elsevier Science Ltd.

Interfacial behaviour of quantum well electrode/electrolyte: effect of redox species on EER spectra of a single quantum well GaAs vertical bar AlxGa1-xAs electrode

The EER spectra of a single quantum well GaAs\AlxGa1-xAs electrode were studied as a function of applied reverse bias in ferrocene, p-methyl nitrobenzene and hydroquinone+benzoquinone non-aqueous solutions. EER spectra were compared for different redox species and showed that a pronounced quantum-confined Stark effect and a Franz-Keldysh oscillation for a single quantum well electrode were obtained in the p-methyl-nitrobenzene- and hydroquinone+benzoquinone-containing solutions. A surface interaction of the single quantum well electrode with ferrocene led to fewer changes in the electric field of the space charge layer for reverse bias; this was suggested to explain the weak quantum-confined Stark effect and Franz-Keldysh oscillation effect observed for the single quantum well electrode in the ferrocene-containing solution. (C) 1997 Elsevier Science S.A.

Measurement of trace phosphorus in dichlorosilane by high-temperature hydrogen reduction gas chromatography

Dichlorosilane, a gas at normal temperature with a boiling point of 8.3 degrees C, is very difficult to sample and detect using conventional methods. We reduced phosphorus in dichlorosilane to PH3 by hydrogen at high temperature, then PH3 was separated from chlorosilanes by NaOH solution and from other hydrides by chromatographic absorption. Thus the problem of interference of chlorosilanes and other hydrides was overcome and PH, was measured by a double flame photometric detector at 526 nm. This method was sensitive, reliable and convenient and the sensitivity reached as low as 0.04 mu g/l.

Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well

The magnetotransport properties of the two-dimensional (2D) electron gas confined in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well structure were studied at temperatures down to 0.35 K in magnetic fields up to 7.5 T. Well resolved 2D Shubnikovde Haas (SdH) oscillations were observed, although the conductivity of the sample in the as grown state was dominated by a bulk parallel conduction layer. After removing most of the parallel conduction layer by wet chemical etching the amplitude and number of SdH oscillations increased. From the temperature dependence of the amplitude the effective mass of the electrons was estimated as 0.17 m(0). Copyright (C) 1996 Published by Elsevier Science Ltd

EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface

The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa1-xAs electrode in HQ/BQ and Fc/Fc(+) electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte electroreflectance spectroscopy. The interaction of the surface state of the SQW electrode with redox species and its effects on the distribution of external bias at the interface of the SQW electrode are discussed.

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE

The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. (C) 1995 American Institute of Physics.

Design of Tapered Rib Spot-Size Converter with Double-Cladding Structure

A novel structure of spot-size converter is designed to allow low loss and large alignment tolerance between single-mode rib waveguide devices and fiber arrays theoretically. The spot-size converter consists of a tapered rib core region and a double-cladding region. Through optimizing parameters,an expanded mode field can be tightly confined in the inner cladding and thus radiation loss be reduced largely at the tapered region. The influence of refractive index and thickness of the inner cladding on coupling loss is analyzed in particular. A novel,easy method of fabricating tapered rib spot-size converter based on silicon-on-insulator material is proposed.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

Narrow-beam divergence 1.55μm laser diodes with integrated self-aligned spotsize conVerter

This paper describes the high performance of narrow-beam divergence spot size converter (SSC) integrated separately confined heterostructure (SCH) LD. The upper optical confinement layer (OCL) and the butt-coupled tapered thickness waveguide were regrown simultaneously, which not only offered the separated optimization of the active region and the integrated spotsize converter, but also reduced the difficulty of the butt-joint selective regrowth. The threshold current was as low as 5.4 mA, the output power at 55 mA was 10.1 mW, the vertical and horizontal far field divergence angles were as low as 9°and 15°, and the 1-dB misalignment tolerances were 3.6 and 3.4μm, respectively.

Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440degreesC,using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 degreesC is needed. The diameters of Si nanowires range from 15 to 100 urn. The structure morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

Potential light source for photonic integrated circuits based on the equilateral triangle resonator

The semiconductor microlasers based on the equilateral triangle resonator (ETR) can be fabricated from the edge-emitting laser wafer by dry-etching technique, and the directional emission can be obtained by connecting an output waveguide to one of the vertices of the ETR. We investigate the mode characteristics, especially the mode quality factor, for the ETR with imperfect vertices, which is inevitable in the real technique process. The numerical simulations show that the confined modes can still have a high quality factor in the ETR with imperfect vertices. We can expect that the microlasers is a suitable light source for photonic integrated circuits.