Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

于2010-10-29批量导入

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Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ.

Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ.