Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots


Autoria(s): Chang K; Xia JB
Data(s)

1997

Resumo

Within the framework of the single-band effective-mass envelope-function theory, the effect of electric field on the electronic structures of pyramidal quantum dot is investigated. Taking the Coulomb interaction between the heavy holes and electron into account, the quantum confined Stark shift of the exciton as functions of the strength and direction of applied electric field and the size of the quantum dot are obtained. An interesting asymmetry of Stark shifts around the zero field is found. (C) 1997 Elsevier Science Ltd.

Identificador

http://ir.semi.ac.cn/handle/172111/15107

http://www.irgrid.ac.cn/handle/1471x/101448

Idioma(s)

英语

Fonte

Chang K; Xia JB .Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots ,SOLID STATE COMMUNICATIONS,1997,104(6):351-354

Palavras-Chave #半导体物理 #nanostructures #semiconductor #electron states #SELF-ORGANIZED GROWTH #ELECTRONIC-STRUCTURE #ENERGY-LEVELS #GAAS #SEMICONDUCTORS #BISTABILITY
Tipo

期刊论文