Radar methods for the exploration of glaciers

The problem of finding the depths of glaciers and the current methods are discussed briefly. Radar methods are suggested as a possible improvement for, or adjunct to, seismic and gravity survey methods. The feasibility of propagating electromagnetic waves in ice and the maximum range to be expected are then investigated theoretically with the aid of experimental data on the dielectric properties of ice. It is found that the maximum expected range is great enough to measure the depth of many glaciers at the lower radar frequencies if there is not too much liquid water present. Greater ranges can be attained by going to lower frequencies.

The results are given of two expeditions in two different years to the Seward Glacier in the Yukon Territory. Experiments were conducted on a small valley glacier whose depth was determined by seismic sounding. Many echoes were received but their identification was uncertain. Using the best echoes, a profile was obtained each year, but they were not in exact agreement with each other. It could not be definitely established that echoes had been received from bedrock. Agreement with seismic methods for a considerable number of glaciers would have to be obtained before radar methods could be relied upon. The presence of liquid water in the ice is believed to be one of the greatest obstacles. Besides increasing the attenuation and possibly reflecting energy, it makes it impossible to predict the velocity of propagation. The equipment used was far from adequate for such purposes, so many of the difficulties could be attributed to this. Partly because of this, and the fact that there are glaciers with very little liquid water present, radar methods are believed to be worthy of further research for the exploration of glaciers.

Comparison of survey methods for estimating abundance of harbor seals (Phoca vitulina) in glacial fjords

The importance of glacial ice habitats to harbor seals (Phoca vitulina) in Alaska has become increasingly apparent. However, enumerating harbor seals hauled out on ice in glacial fjords has been difficult. At Johns Hopkins Inlet in Glacier Bay, Alaska, we compared a shore-based counting method to a large-format aerial photography method to estimate seal abundance. During each aerial survey, shore-based observers simultaneously counted seals from an observation post. Both survey methods incurred errors in double-counting and missing seals, especially when ice movements caused seals to drift between survey zones. Advantages of shore-based counts included the ability to obtain multiple counts for relatively little cost, distinguish pups from adults, and to distinguish mobile seals from shadows or glacial debris of similar size. Aerial photography provided a permanent record of each survey, allowing both a reconciliation of counts in overlapping zones and the documentation of the spatial distribution of seals and ice within the fjord.

Estimating Dungeness crab (Cancer magister) abundance: crab pots and dive transects compared

Dungeness crabs (Cancer magister) were sampled with commercial pots and counted by scuba divers on benthic transects at eight sites near Glacier Bay, Alaska. Catch per unit of effort (CPUE) from pots was compared to the density estimates from dives to evaluate the bias and power of the two techniques. Yearly sampling was conducted in two seasons: April and September, from 1992 to 2000. Male CPUE estimates from pots were significantly lower in April than in the following September; a step-wise regression demonstrated that season accounted for more of the variation in male CPUE than did temperature. In both April and September, pot sampling was significantly biased against females. When females were categorized as ovigerous and nonovigerous, it was clear that ovigerous females accounted for the majority of the bias because pots were not biased against nonovigerous females. We compared the power of pots and dive transects in detecting trends in populations and found that pots had much higher power than dive transects. Despite their low power, the dive transects were very useful for detecting bias in our pot sampling and in identifying the optimal times of year to sample so that pot bias could be avoided.

Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal

We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions. © 2013 American Institute of Physics.

Theoretical design and performance of InxGa1-xN two-junction solar cells

The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

Photoelectric characteristics of metal/InGaN/GaN heterojunction structure

A heterojunction structure photodetector was fabricated by evaporating a semitransparent Ni/Au metal film oil the InGaN/GaN structure. The photocurrent (PC) spectra show that both the Schottky junction (NiAu/InGaN) and the InGaN/GaN isotype heterojunction contribute to the PC signal which suggests that two junctions are connected in series and result in a broader spectral response of the device. Secondary electron, cathodoluminescence and electron-beam-induced current images measured from the same area of the edge surface clearly reveal the profile of the layer structure and distribution of the built-in electric field around the two junctions. A band diagram of the device is drawn based oil the consideration of the polarization effect at the InGaN/GaN interface. The analysis is consistent with the physical mechanism of a tandem structure of two junctions connected in series.

Photovoltaic effects in InGaN structures with p-n junctions

InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. Using double-crystal X-ray diffraction measurements, it was found that the room temperature band gaps of p-InGaN and n-InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 x 10(-2) mA cm(-2) short-circuit current, 0.43 V open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a Schottky barrier and many defects of the p-InGaN film. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Simulation of In0.65Ga0.35N single-junction solar cell

The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. It is found that the optimum efficiency of a In0.65Ga0.35N solar cell is 20.284% with 5 x 10(17) cm(-3) carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer.

Substantial photo-response of InGaN p-i-n homojunction solar cells

InGaN p-i-n homojunction structures were grown by metal-organic chemical vapor deposition, and solar cells with different p-contact schemes were fabricated. X-ray diffraction measurements demonstrated that the epitaxial layers have a high crystalline quality. Solar cells with semitransparent p-contact exhibited a fill factor (FF) of 69.4%, an open-circuit voltage (V-oc) of 2.24 V and an external quantum efficiency (EQE) of 41.0%. On the other hand, devices with grid p-contact showed the corresponding values of 57.6%, 2.36 V, 47.9% and a higher power density. These results indicate that significant photo-responses can be achieved in InGaN p-i-n solar cells.

Effects of the wave function localization in AlInGaN quaternary alloys

Using the first-principles band-structure method and the special quasirandom structures approach, the authors have investigated the band structure of random AlxInyGa1-x-yN quaternary alloys. They show that the wave functions of the band edge states are more localized on the InN sites. Consequently, the photoluminescence transition intensity in the alloy is higher than that in GaN. The valence band maximum state of the quaternary alloy is also higher than GaN with the same band gap, indicating that the alloy can be doped more easily as p-type. (c) 2007 American Institute of Physics.

Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells

Excitonic states in AlxGa1-xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.

Strong circular photogalvanic effect in ZnO epitaxial films

We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer.

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.