Simulation of In0.65Ga0.35N single-junction solar cell
| Data(s) |
2007
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|---|---|
| Resumo |
The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. It is found that the optimum efficiency of a In0.65Ga0.35N solar cell is 20.284% with 5 x 10(17) cm(-3) carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhang, X ; Wang, X ; Xiao, H ; Yang, C ; Ran, J ; Wang, C ; Hou, Q ; Li, J .Simulation of In0.65Ga0.35N single-junction solar cell ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2007 ,40(23): 7335-7338 |
| Palavras-Chave | #半导体材料 #BAND-GAP #INN |
| Tipo |
期刊论文 |
