Substantial photo-response of InGaN p-i-n homojunction solar cells
Data(s) |
2009
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Resumo |
InGaN p-i-n homojunction structures were grown by metal-organic chemical vapor deposition, and solar cells with different p-contact schemes were fabricated. X-ray diffraction measurements demonstrated that the epitaxial layers have a high crystalline quality. Solar cells with semitransparent p-contact exhibited a fill factor (FF) of 69.4%, an open-circuit voltage (V-oc) of 2.24 V and an external quantum efficiency (EQE) of 41.0%. On the other hand, devices with grid p-contact showed the corresponding values of 57.6%, 2.36 V, 47.9% and a higher power density. These results indicate that significant photo-responses can be achieved in InGaN p-i-n solar cells. National High Technology Research and Development Program of China 2006AA03Z409 Xiamen Municipal Science & Technology Bureau 2006AA03Z110 This work was supported in part by National High Technology Research and Development Program of China (2006AA03Z409) and a research program of Xiamen Municipal Science & Technology Bureau (2006AA03Z110). |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zeng SW ; Zhang BP ; Sun JW ; Cai JF ; Chen C ; Yu JZ .Substantial photo-response of InGaN p-i-n homojunction solar cells ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009 ,24(5):Art. No. 055009 |
Palavras-Chave | #光电子学 #FUNDAMENTAL-BAND GAP #INN #ABSORPTION #ALLOYS #ENERGY |
Tipo |
期刊论文 |