Strong circular photogalvanic effect in ZnO epitaxial films


Autoria(s): Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.)
Data(s)

2010

Resumo

We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

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国际

Identificador

http://ir.semi.ac.cn/handle/172111/13520

http://www.irgrid.ac.cn/handle/1471x/66261

Idioma(s)

英语

Fonte

Zhang Q (Zhang Q.), Wang XQ (Wang X. Q.), Yin CM (Yin C. M.), Xu FJ (Xu F. J.), Tang N (Tang N.), Shen B (Shen B.), Chen YH (Chen Y. H.), Chang K (Chang K.), Ge WK (Ge W. K.), Ishitani Y (Ishitani Y.), Yoshikawa A (Yoshikawa A.).Strong circular photogalvanic effect in ZnO epitaxial films.APPLIED PHYSICS LETTERS,2010,97(4):Art. No. 041907

Palavras-Chave #半导体材料 #II-VI semiconductors #photoconductivity #photovoltaic effects #semiconductor epitaxial layers #spin-orbit interactions #valence bands #wide band gap semiconductors #zinc compounds
Tipo

期刊论文