Strong circular photogalvanic effect in ZnO epitaxial films
| Data(s) |
2010
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|---|---|
| Resumo |
We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07T12:49:57Z No. of bitstreams: 1 Strong circular photogalvanic effect in ZnO epitaxial films.pdf: 403925 bytes, checksum: 8ca0c9a7eb8a957f30738854896274ff (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07T13:10:44Z (GMT) No. of bitstreams: 1 Strong circular photogalvanic effect in ZnO epitaxial films.pdf: 403925 bytes, checksum: 8ca0c9a7eb8a957f30738854896274ff (MD5) Made available in DSpace on 2010-09-07T13:10:44Z (GMT). No. of bitstreams: 1 Strong circular photogalvanic effect in ZnO epitaxial films.pdf: 403925 bytes, checksum: 8ca0c9a7eb8a957f30738854896274ff (MD5) Previous issue date: 2010 国际 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhang Q (Zhang Q.), Wang XQ (Wang X. Q.), Yin CM (Yin C. M.), Xu FJ (Xu F. J.), Tang N (Tang N.), Shen B (Shen B.), Chen YH (Chen Y. H.), Chang K (Chang K.), Ge WK (Ge W. K.), Ishitani Y (Ishitani Y.), Yoshikawa A (Yoshikawa A.).Strong circular photogalvanic effect in ZnO epitaxial films.APPLIED PHYSICS LETTERS,2010,97(4):Art. No. 041907 |
| Palavras-Chave | #半导体材料 #II-VI semiconductors #photoconductivity #photovoltaic effects #semiconductor epitaxial layers #spin-orbit interactions #valence bands #wide band gap semiconductors #zinc compounds |
| Tipo |
期刊论文 |
