Steady-state bright-dark vector spatial solitons in biased photorefractive-photovoltaic crystals

We show that bright-dark vector solitons are possible in biased photorefractive-photovoltaic crystals under steady-state conditions, which result from both the bulk photovoltaic effect and the spatially nonuniform screening of the external bias field. The analytical solutions of these vector solitons can be obtained in the case of \sigma\ much less than 1, where sigma is the parameter controlling the intensities of the two optical beams. In the limit of -1 < sigma much less than 1, these vector solitons can also be determined by use of simple numerical integration procedures. When the bulk photovoltaic effect is neglectable, these vector solitons are bright-dark vector screening solitons studied previously in the \sigma\ much less than 1 regime, and predict bright-dark vector screening solitons in the -1 < sigma less than or equal to 1 regime. When the external bias field is absent, these vector solitons predict bright-dark vector photovoltaic solitons in closed and open circuits. (C) 2002 Elsevier Science B.V. All rights reserved.

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.

Grey screening-photovoltaic soliton-induced waveguides

This paper shows that waveguides induced by grey screening-photovoltaic solitons are always single mode for all intensity ratios, which are the ratio between the peak intensity of the soliton and the dark irradiance. It finds that the confined energy near the centre of the grey soliton and the propagation constant of the guided mode increase monotonically with increasing intensity ratio. On the other hand, when the soliton greyness increases, the confined energy near the centre of the grey soliton and the propagation constant of the guided mode reduce monotonically. When the bulk photovoltaic effect is neglected for short circuits, these waveguides become waveguides induced by grey screening solitons. When the external bias field is absent, these waveguides become waveguides induced by grey photovoltaic solitons.

1. 大鼠海马-前额叶回路在学习记忆中的作用2. 芬克罗酮改善恒河猴空间工作记忆的谷氨酸机制

一、大鼠海马-前额叶回路在学习记忆中的作用 解剖学研究证实大鼠和猴的海马结构（hippocampal formation, HF；本文‘海马 (hippocampus, Hip)’一词即指海马结构）和前额叶 (prefrontal cortex, PFC) 之间存在一条单向、同侧和单突触的神经回路，即海马-前额叶回路（Hip-PFC回路）。Hip和PFC均参与学习记忆等多种认知功能，PFC是工作记忆的关键脑区，而Hip是空间参考记忆的关键脑区。虽然人们已经对PFC和Hip进行了广泛深入的研究，但对Hip-PFC回路参与哪些认知功能还知之甚少。本研究的目的就是通过暂时阻断Hip-PFC回路，探讨其在学习和记忆中的作用。 在大鼠，Hip-PFC回路中的纤维主要从Hip腹部 (ventral hippocampus, VH)发出，投射到PFC的前边缘皮质(prelimbic cortex, PLC)、下边缘皮质 (infralimbic cortex, ILC) 和外侧前额叶 (lateral prefrontal cortex) 等亚区，其中PLC是Hip-PFC主要投射的区域。我们通过给动物安装慢性导管向脑内注射GABAA受体激动剂muscimol (MU) 阻断Hip-PFC回路。注射位点包括 ①双侧PLC，②双侧VH，③一侧VH和对侧PLC (VH-PLC)。我们首先观察了在PLC或VH局部注射MU对自由活动大鼠PLC和VH脑电功率的影响，并以此确定在行为实验中所用蝇蕈醇的剂量。然后采用T-迷宫空间交互延缓作业 (spatial delayed alternation task) 测试Hip-PFC回路被阻断的动物的空间工作记忆功能；采用被动回避作业 (passive avoidance task) 测试其情绪相关记忆的能力（训练前给药；24 h后重测试）；采用Morris水迷宫作业 (Morris water maze task) 测试其空间参考记忆的能力（每天训练前给药；训练期（3 d）结束24 h后重测试）。结果表明：在大鼠PLC或VH局部注射0.5 μg/0.25μl MU后30 min显著抑制VH 和PLC的脑电功率 (VH, p < 0.01; PLC, p < 0.05 vs. PBS/baseline)。注射MU (0.5 μg/0.25μl) 到 ①双侧PLC、②双侧VH、③VH-PLC均显著降低动物在空间交互延缓作业 (All p < 0.001, vs. PBS) 和空间Morris水迷宫作业中的成绩 (All p < 0.05, vs. PBS)，表明Hip-PFC回路在空间工作记忆（空间短时记忆）和在空间参考记忆（空间长时记忆）中均起重要作用。在空间交互延缓作业中，双侧PLC被抑制的大鼠的成绩显著低于双侧VH或VH-PLC被抑制的动物，说明PFC在空间工作记忆功能中占有主导地位。在被动回避作业中，双侧VH被抑制动物的回避反应的潜伏期显著短于对照动物 (p < 0.05 vs. PBS)，说明双侧VH被抑制动物的情绪记忆受损；而双侧PLC或VH-PLC被抑制的动物其回避反应的潜伏期与对照动物无显著差异 (PLC, p > 0.9; VH-PLC, p > 0.3 vs. PBS)，表明双侧PLC或VH-PLC被抑制的动物情绪记忆正常。被动回避作业的结果说明VH参与情绪记忆的形成，但Hip-PFC回路在情绪记忆形成中不起重要作用。 以上结果表明，大鼠Hip-PFC回路参与空间工作记忆和空间参考记忆而不是情绪记忆功能。情绪记忆的关键脑结构是杏仁复合体 (amygdala complex, AMC)，VH与AMC有密切的纤维联系。VH被抑制的大鼠情绪记忆受损，说明情绪记忆可能与AMC-Hip回路有关。情绪记忆与空间记忆（参考记忆和工作记忆）在解剖上的分离说明，对于不同类型的记忆来说，其在脑内的信息加工过程是并行的。神经回路内部的信息加工过程则是串行的，回路上任何一个结构的破坏均可导致回路功能的损伤。本研究的结果为学习记忆的“多重记忆系统”理论和记忆信息加工的串行并行机制提供了新的实验证据。 二、芬克罗酮改善成年恒河猴空间工作记忆的谷氨酸机制 芬克罗酮是中科院昆明植物所郝小江等合成的取代吡咯烷酮类化合物。中科院昆明动物所蔡景霞等发现芬克罗酮能改善东莨菪碱、育亨宾等导致的多种动物的不同类型的学习记忆障碍，提高老年动物的学习记忆能力，尤其是老年猴的空间工作记忆。已证实芬克罗酮为部分钙激动剂，可使脑缺血沙土鼠脑内升高的谷氨酸降低，而使正常的沙土鼠海马胞外谷氨酸释放增加。那么芬克罗酮能否提高正常动物的学习记忆，其对正常动物学习记忆的提高是否与其增加谷氨酸的释放有关？本研究采用空间延缓反应作业和谷氨酸NMDA受体拮抗剂MK-801在正常成年猴恒河猴上探讨了以上问题。 结果表明，口服芬克罗酮可显著提高成年猴的空间工作记忆，其量效曲线呈倒‘U’形，符合许多促智药的量效特点。0.25 mg/kg和0.5 mg/kg为芬克罗酮的最佳有效剂量 (p < 0.05 vs. 安慰剂)。肌注MK-801 (0.1 mg/kg) 显著降低成年猴的空间工作记忆 (p < 0.01 vs. 安慰剂)，而口服2.0 mg/kg和4.0 mg/kg的芬克罗酮则显著改善MK-801导致的工作记忆障碍 (p < 0.05 vs. MK-801)。芬克罗酮的所有测试剂量不影响猴在作业中的反应时 (p > 0.05 vs. 安慰剂)，表明芬克罗酮在该剂量范围不影响动物的运动能力。 本研究结果提示，芬克罗酮可能通钙激动作用促进谷氨酸的释放，在一定剂量范围内提高胞外谷氨酸水平，提高正常动物的空间工作记忆等认知功能。 关键词：芬克罗酮，恒河猴，空间工作记忆，空间延缓反应作业，谷氨酸，MK-801

NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER

A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm.

AN ALUMINUM OXYNITRIDE FILM

We report on an aluminum oxynitride (AlON) film which was successfully made using the reactiver r.f. sputtering method in an N2-O2 mixture. The fabrication process, atomic components, breakdown field and refractive index of the AlON film are shown in detail. The AlON film is a new polyfilm combining the good properties of Al2O3 and AlN, and it is very interesting with regard to optoelectronic devices and integrated optic circuits.

A novel noise optimization technique for inductively degenerated CMOS LNA

This paper proposes a novel noise optimization technique. The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier (LNA) circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation, respectively, by mathematical analysis and reasonable approximation methods. LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae. We design a 1.8 GHz LNA in a TSMC 0.25 pan CMOS process. The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW, demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

Comparison of Loss and Crosstalk Characteristics of SOI Based Intersecting Waveguides with Different Bend Structures

By means of two dimension beam propagation method (2D-BPM) with high order Pade approximation, behaviors of SOI waveguide based bend intersections with variant bending radius are simulated and analized. The result shows that crosstalk of intersections decreases with the increase of bending radius and intersecting angle. Furthermore, loss and crosstalk characteristics of bend intersections formed by sine bend, cosine bend and arc bend are compared. Sine bend based structures are proved that it can present lowest loss and smallest crosstalk properties among the three and may find their wide application in the design of bend intersections and other more complicated photonic devices and circuits.

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

2 x 2 electrooptical switch in silicon-on-insulator waveguide

A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7dB and crosstalk of 4.8dB has been observed.

Space-grown SI-GaAs and its application

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. The crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single. crystal has surpassed the best. terrestrial counterparts. Studies on the correlation between SI-GaAs wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.