AN ALUMINUM OXYNITRIDE FILM


Autoria(s): DEHUANG W; LIANG G
Data(s)

1991

Resumo

We report on an aluminum oxynitride (AlON) film which was successfully made using the reactiver r.f. sputtering method in an N2-O2 mixture. The fabrication process, atomic components, breakdown field and refractive index of the AlON film are shown in detail. The AlON film is a new polyfilm combining the good properties of Al2O3 and AlN, and it is very interesting with regard to optoelectronic devices and integrated optic circuits.

Identificador

http://ir.semi.ac.cn/handle/172111/14319

http://www.irgrid.ac.cn/handle/1471x/101194

Idioma(s)

英语

Fonte

DEHUANG W; LIANG G.AN ALUMINUM OXYNITRIDE FILM,THIN SOLID FILMS,1991,198(0):207-210

Palavras-Chave #半导体材料 #AL2O3
Tipo

期刊论文