Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS
| Data(s) |
2006
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| Resumo |
A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC. A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC. 于2010-11-23批量导入 zhangdi于2010-11-23 13:03:29导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:03:29Z (GMT). No. of bitstreams: 1 4321.pdf: 574221 bytes, checksum: 0dd8f7d16584bc9e0db5f4832bd591fa (MD5) Previous issue date: 2006 国家高技术研究发展计划资助,国家自然科学基金资助项目 Institute of Semiconductors, Chinese Academy of Sciences;School of Electronic Information Engineering, Tianjin University 国家高技术研究发展计划资助,国家自然科学基金资助项目 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Chen Hongda;Gao Peng;Mao Luhong;Huang Jiale.Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS,半导体学报,2006,27(2):323-327 |
| Palavras-Chave | #光电子学 |
| Tipo |
期刊论文 |
