Mechanism study of femtosecond laser induced selective metallization (FLISM) on glass surfaces

We investigate the mechanism of selective metallization on glass surfaces with the assistance of femtosecond laser irradiation followed by electroless plating. Irradiation of femtosecond laser makes it possible to selectively deposit copper microstructures in the irradiated area on glass surfaces coated with silver nitrate films. The energy-dispersive X-ray (EDX) analyses reveal that silver atoms are produced on the surface of grooves formed by laser ablation, which serve as catalysis seeds for subsequent electroless copper plating. (C) 2008 Elsevier B.V. All rights reserved.

Fabrication of an integrated Raman sensor by selective surface metallization using a femtosecond laser oscillator

We demonstrate that a Raman sensor integrated with a micro-heater, a microfluidic chamber, and a surface-enhanced Raman scattering (SERS) substrate can be fabricated in a glass chip by femtosecond laser micromachining. The micro-heater and the SERS substrate are fabricated by selective metallization on the glass surface using a femtosecond laser oscillator, whereas the microfluidic chamber embedded in the glass sample is fabricated by femtosecond laser ablation using a femtosecond laser amplifier. We believed that this new strategy for fabricating multifunctional integrated microchips has great potential application for lab-on-a-chips. (C) 2008 Elsevier B.V. All rights reserved.

Selective metallization on insulator surfaces with femtosecond laser pulses

We report selective metallization on surfaces of insulators ( glass slides and lithium niobate crystal) based on femtosecond laser modification combined with electroless plating. The process is mainly composed of four steps: (1) formation of silver nitrate thin films on the surfaces of glass or crystal substrates; (2) generation of silver particles in the irradiated area by femtosecond laser direct writing; (3) removal of unirradiated silver nitrate films; and (4) selective electroless plating in the modified area. We discuss the mechanism of selective metallization on the insulators. Moreover, we investigate the electrical and adhesive properties of the copper microstructures patterned on the insulator surfaces, showing great potential of integrating electrical functions into lab-on-a-chip devices. (C) 2007 Optical Society of America.

Space-selective co-precipitation of silver and gold nanoparticles in femtosecond laser pulses irradiated Ag+, Au3+ co-doped silicate glass

We report on space-selective co-precipitation of silver and gold nanoparticles in Ag+, Au3+ co-doped silicate glasses by irradiation of femtosecond laser pulses and subsequent annealing at high temperatures. The color of the irradiated area in the glass sample changed from yellow to red with the increase of the annealing temperature. The effects of average laser power and annealing temperature on precipitation of the nanoparticles were investigated. A reasonable mechanism was proposed to explain the observed phenomena. (c) 2006 Elsevier Ltd. All rights reserved.

GENERATION OF PICOSECOND PULSES IN AN INJECTION LASER WITH AN EXTERNAL SELECTIVE RESONATOR.

Pulses of 15 psec duration were generated by an injection laser with an external dispersive resonator operating in the active mode-locking regime. This regime was attained by subjecting the laser diode to a current of high frequency equal to the intermode interval in the external resonator. The duration of the pulses was determined by an autocorrelation method in which the second harmonic was generated in an LiIO//3 crystal.

A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser

A new method for fabricating electroabsorption modulator integrated with a distributed feedback laser (EML) was proposed. With the method we fabricated a selective area growth double stack active layer EML (SAG-DSAL-EML). Through comparing with other fabrication methods of EMLs, the characters and the merits of the new method presented in this paper were discussed.

10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE

A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s(-1) optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s(-1) non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.