Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD
Data(s) |
2005
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Resumo |
The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG, method is performed. A large band-gap photoluminescence wavelength shift of 88 mn. was obtained with a small mask width variation (0-30 mu m). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 mu m and EAM length of 150 mu m has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhao, Q; Pan, JQ; Zhou, F; Wang, BJ; Wang, LF; Wang, W .Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,JUN 2005,20 (6):544-547 |
Palavras-Chave | #光电子学 #VAPOR-PHASE EPITAXY |
Tipo |
期刊论文 |