Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

Autoria(s): Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W
Data(s)

2005
Resumo

　
Identificador

http://ir.semi.ac.cn/handle/172111/8540

http://www.irgrid.ac.cn/handle/1471x/63800
Idioma(s)

英语
Fonte

Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W .Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,AUG 2005,20 (8):882-885
Palavras-Chave #光电子学 #摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA #output light power of 4.5 mW #and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover #over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device #10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.
Tipo

期刊论文
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