An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser
| Data(s) |
2008
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| Resumo |
An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser The typical threshold current of the EML is 18mA, and the output power is 5.6mW at EAM facet. An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser The typical threshold current of the EML is 18mA, and the output power is 5.6mW at EAM facet. zhangdi于2010-03-09批量导入 zhangdi于2010-03-09批量导入 Opt Soc Amer.; IEEE Lasers & ElectroOpt Soc. [Wang, Huan] CAS, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Opt Soc Amer.; IEEE Lasers & ElectroOpt Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
AOE DI WANG COMMERCIAL CENTRE, 6503, SHUN HING SQUARE, 65TH FLR, 5002 SHEN NAN RD E, SHENZHEN, GUANGDONG 518008, PEOPLES R CHINA |
| Fonte |
Wang, H;Zhu, HL;Cheng, YB;Chen, D;Zhang, W;Wang, LS;Zhang, YX;Sun, Y;Wang, W.An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser .见：AOE .AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE,DI WANG COMMERCIAL CENTRE, 6503, SHUN HING SQUARE, 65TH FLR, 5002 SHEN NAN RD E, SHENZHEN, GUANGDONG 518008, PEOPLES R CHINA ,2008,CONFERENCE PROCEEDINGS: 490-492 |
| Palavras-Chave | #光电子学 |
| Tipo |
会议论文 |
